“…Supported by the researches of Wang, L. and Cordier, Y. [6,7], the thickness, surface morphology, off-cut angle, curvature magnitude, and shape of 3C-SiC/Si template will affect the strain relaxation and dislocation density reduction in the GaN layer which grown on the 3C-SiC/Si substrate. The growth temperature has direct effect on the surface, the crystalline quality and the curvature of 3C-SiC films.…”