Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Cordier, Y.; Portail, Marc; Chenot, Sébastien; Tottereau, O.; Zieliński, Marcin; Chassagne, Thierry

doi:10.1557/proc-1068-c04-05

Cited by 2 publications

(2 citation statements)

References 17 publications

(12 reference statements)

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“…Supported by the researches of Wang, L. and Cordier, Y. [6,7], the thickness, surface morphology, off-cut angle, curvature magnitude, and shape of 3C-SiC/Si template will affect the strain relaxation and dislocation density reduction in the GaN layer which grown on the 3C-SiC/Si substrate. The growth temperature has direct effect on the surface, the crystalline quality and the curvature of 3C-SiC films.…”

Section: Introduction *mentioning

confidence: 99%

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Mao

Wang

et al. 2017

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A modified two-step carbonization process was used to grow high oriented 3C-SiC films on Si (100) substrates by using SiH4 and C3H8 as precursors. The investigation revealed that the C/Si Moore ratio has important influence on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si (100) were evaluated by Microscopy and SEM. This indicated that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si (100) are grown with a 1.6 C/Si ratio at 1385 °C for 1hr. XRD results showed that the diffraction intensity of 3C-SiC (200) peak was very closed to that of Si (400) peak and the FWHM value of it was about 0.19°. The surface roughness was 3.6 nm.

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Section: Introduction *mentioning

confidence: 99%

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Mao

Wang

et al. 2017

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“…There are several challenges in reaching this goal [1], firstly the wafers must adhere to strict control on bow and wafer thickness imposed to avoid problems during device processing in a regular CMOS fab. Some of the techniques which are used to compensate the large stress developed during GaN growth on silicon are use of thick silicon wafers, patterned wafers [2], Al 2 O 3on-Si [3] or SiC-on-Si [4] coated wafers which help reduce the thermal/lattice mismatch. In this paper we present techniques which play significant role in satisfying the set specification limits without using techniques which add to the processing steps.…”

Section: Introductionmentioning

confidence: 99%

AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs

Kandaswamy

Liang

Zhao

et al. 2014

Phys. Status Solidi C

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In GaN‐on‐silicon there are many challenges which are currently encountered when making this technology compatible with standard Si‐CMOS fabs especially the bow. Bringing this technology to CMOS fabs can potentially drive the costs down, in addition to the cost advantage expected from large wafer sizes. We report here on the impact of AlN nucleation layer on crystal quality and bow. The focus will be on V/III ratios and pre‐dose conditions for AlN, which have considerable effect on the AlN/AlGaN/GaN buffer structures. We will also discuss how AlN thickness can be used to tune the bow. Finally, a brief description on the effect of surface pits will be presented.(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Cited by 2 publications

References 17 publications

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs

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