Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Abstract

A modified two-step carbonization process was used to grow high oriented 3C-SiC films on Si (100) substrates by using SiH4 and C3H8 as precursors. The investigation revealed that the C/Si Moore ratio has important influence on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si (100) were evaluated by Microscopy and SEM. This indicated that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si (100) are grown with a 1.6 C/Si ratio at 1385 °C for 1hr. XRD results showed that the diffraction intensity of 3C-SiC (200) peak was very closed to that of Si (400) peak and the FWHM value of it was about 0.19°. The surface roughness was 3.6 nm.

Comparison of Plasma Transferred Arc and Submerged Arc Welded Abrasive Wear Resistant Composite Hardfacings

“…Wear resistance of hardfacings tested on AWW machinery have been increasing after each 1440 m of wear path. It was depicted in the previous research [18] that composite hardfacings containing coarse WC-Co reinforcement (1.6 -2.0 mm) suit well for two-body abrasion condition (AWW). Total length of wear path was 5760 m; as can be seen in Fig.…”