Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si

Häberlen, M.; Gerlach, Jürgen W.; Murphy, Brian J.; Lindner, J.K.N.; Stritzker, B.

doi:10.1016/j.jcrysgro.2009.12.048

Cited by 16 publications

(6 citation statements)

References 48 publications

(58 reference statements)

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“…It is well established that, due to its metastable nature, a pure zincblende GaN phase is difficult to grow without the appearance of small inclusions of a wurtzite GaN phase. [16][17][18] The two subsidiary peaks were then tentatively attributed to reflections from hexagonal GaN. Based on the bulk values of the lattice parameters for h-GaN, a ¼ 3.1879 Å and c ¼ 5.1856 Å , 19 peaks at 2h ¼ 37.25 and 2h ¼ 79.35 can be ascribed to the reflection of the wurtzite plane ð10 11Þ and ð20 22Þ, respectively.…”

Section: Resultsmentioning

confidence: 98%

Magnetic and structural properties of Fe-implanted cubic GaN

Righetti

Gratens

Chitta

et al. 2016

Journal of Applied Physics

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In this article, we report on structural and magnetic properties of cubic GaN epitaxial layers implanted with Fe ions and subsequently subjected to thermal annealing. The epitaxial quality of the layers was studied by X-ray diffraction rocking curves (ω-scans) and Raman spectroscopy. The results show that the implantation damages the crystal structure producing an expansion of the lattice parameter in the implanted region. These damages are partially removed by the thermal treatment. Room temperature ferromagnetism is observed for the sample implanted with a dose of 1.2 × 1016 cm−2, while samples implanted with 2.4 × 1016 cm−2 show a coexistence of ferromagnetism and paramagnetism due to disperse Fe3+. Thermal annealing changes these magnetic properties. For the low dose sample, the ferromagnetism is converted into paramagnetism while for the high dose we observed an enhancement of the ferromagnetic contribution characterized by a superparamagnetism behavior attributed to Fe-based particles.

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Section: Resultsmentioning

confidence: 98%

Magnetic and structural properties of Fe-implanted cubic GaN

Righetti

Gratens

Chitta

et al. 2016

Journal of Applied Physics

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“…The choice of substrate is vital to ensure zincblende GaN growth. The main substrates that have been studied include cubic GaAs (001) (by MBE [10][11][12][13][14] and MOVPE [15][16][17][18][19][20][21]), 3C-SiC (by MBE [22][23][24][25][26] and MOVPE [27]), 3C-SiC on Si by MBE [28][29][30][31][32][33], patterned 3C-SiC on Si [34] and patterned Si [35][36][37] substrates. Some of the substrate properties to consider are lattice matching and difference in thermal expansion coefficient with zincblende GaN and cost.…”

Section: Zincblende Gan Growth Methodsmentioning

confidence: 99%

“…The commercial viability of zincblende GaN LEDs grown on such substrates is also increased by the availability of large area (up to 8 inches in diameter) Si substrates. 3C-SiC layers have been grown on silicon by chemical vapour deposition [32], carbonising with a carbon-containing gas such as C 2 H 2 [39,40], carbonisation in rapid thermal processing reactor [31] and high-dose carbon ion implantation [33]. More recently, Stark et al [35] and Bayram et al [36] have both used patterned Si substrates with {111} side walls, although in slightly different geometries.…”

Section: Zincblende Gan Growth Methodsmentioning

confidence: 99%

Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Lee

2017

Materials Science and Technology

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Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and their widespread usage in lighting can induce significant worldwide electricity savings. To achieve white and colour-tuneable lighting, the mixing of light from red-, blue- and green-wavelength LEDs is desired. At present, the efficiency of green-wavelength LEDs is only about half of that of red- and blue-wavelength LEDs, which is also known as the ‘green gap’ problem. Cubic zincblende GaN has the potential to bridge the ‘green gap’ due to the theoretical absence of internal electric fields that plague the commonly used c-plane hexagonal wurtzite structure. This review first looks at the various methods of achieving metastable zincblende GaN, and examines the crystal defects present. Then the different components towards a full zincblende GaN LED structure, including p- and n-type doping, zincblende InGaN and AlGaN on GaN heterostructures, together with the problems that need to be overcome to achieve green-wavelength emissions are reviewed. This review was submitted as part of the 2017 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged

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“…The 3C-SiC layer is then brought to the surface by ion beam amorphization of the top silicon layer and a part of the buried SiC layer. Wet chemical etching removes the amorphized layers and leads to surfaces sufficiently smooth for epitaxial growth of GaN by ion beam assisted MBE [8]. From previous X-ray diffraction experiments on www.pss-c.com…”

Section: Methodsmentioning

confidence: 99%

Decoupling of a strained 3C‐SiC(111) thin film on silicon by He⁺ and O⁺ ion implantation

Häberlen

Murphy

Stritzker

et al. 2011

Phys. Status Solidi (c)

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This paper reports the successful reduction of tensile strain in a thin ion‐beam‐synthesized 3C‐SiC(111) layer on silicon. Significant relaxation is achieved by creating a near‐interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High‐resolution X‐ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide‐band‐gap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co‐implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si

Cited by 16 publications

References 48 publications

Magnetic and structural properties of Fe-implanted cubic GaN

Magnetic and structural properties of Fe-implanted cubic GaN

Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Decoupling of a strained 3C‐SiC(111) thin film on silicon by He⁺ and O⁺ ion implantation

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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si

Cited by 16 publications

References 48 publications

Magnetic and structural properties of Fe-implanted cubic GaN

Magnetic and structural properties of Fe-implanted cubic GaN

Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Decoupling of a strained 3C‐SiC(111) thin film on silicon by He+ and O+ ion implantation

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Decoupling of a strained 3C‐SiC(111) thin film on silicon by He⁺ and O⁺ ion implantation