Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Lee, Lok Yi

doi:10.1080/02670836.2017.1300726

Cited by 25 publications

(17 citation statements)

References 94 publications

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“…At the same time, c-GaN offers additional advantages like; greater hole mobility and a smaller band gap of 3.2 eV at room temperature (RT) compared with 3.4 eV of h-GaN. This last characteristic is an extra advantage when alloying c-GaN with c-InN (with a bandgap of 0.66 eV at RT), as less In is required to achieve smaller band gaps 8 , 9 . Regarding optoelectronic applications, there is a wider choice of cubic substrates to grow c-GaN, such as GaAs and SiC 10 , 11 .…”

Section: Introductionmentioning

confidence: 99%

Study of the heavily p-type doping of cubic GaN with Mg

Hernández-Gutiérrez

Casallas-Moreno

Rangel-Kuoppa

et al. 2020

Sci Rep

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We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

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Section: Introductionmentioning

confidence: 99%

Study of the heavily p-type doping of cubic GaN with Mg

Hernández-Gutiérrez

Casallas-Moreno

Rangel-Kuoppa

et al. 2020

Sci Rep

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“…Emission wavelengths ranging from UV to blue have been demonstrated using GaN-based heterostructures with EQE 80% [ 69 ], while the expansion of the LED emission wavelength to the green and then to the yellow spectral range leads to much lower maximum EQE values, namely 40–50% [ 70 ] and 20% [ 71 ], respectively. The efficiency dip in the green region is known as the “green gap” [ 64 , 72 , 73 ]. The small diameter InN-NWs are considered as one candidate technology [ 74 ] that, combined with the DDCT concept, can bridge the green gap.…”

Section: Outlook Of Ddct-based Ledsmentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

et al. 2017

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics.

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“…Hexagonal, wurtzite (wz)-phase III-Nitride material systems have been extensively used for various optoelectronic applications, and their widespread usage in lighting has delivered significant worldwide electricity savings. However, at present, the efficiency of green-wavelength LEDs is only about half of that of InGaAsP-based red-and nitride-based blue-wavelength LEDs, which is also known as the 'green gap' problem [1]. This is partially related to the presence of piezoelectric and spontaneous polarisation fields in wurtzite nitride heterostructures, resulting in the quantum confined Stark effect when grown in the (0001) orientation.…”

Section: Introductionmentioning

confidence: 99%

Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)

Gundimeda

Rostami

Frentrup

et al. 2022

J. Phys. D: Appl. Phys.

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The suitability of AlxGa1-xN nucleation layers with varying Al fraction x for the metal organic vapour phase epitaxy of zincblende GaN on (001) 3C-SiC was investigated, using X-ray photoelectron spectroscopy, atomic force microscopy, and x-ray diffraction. The as-grown nucleation layers exhibited elongated island structures on their surface, which reduce laterally into smaller, more equiaxed islands with increasing AlN composition. During high-temperature annealing in a mixture of NH3 and H2 the nucleation islands with low Al fraction ripened and increased in size, whereas this effect was less pronounced in samples with higher Al fraction. The compressive biaxial in-plane strain of the nucleation layers increases with increasing AlN composition up to x=0.29. GaN epilayers grown over nucleation layers that have low Al fraction have high cubic zincblende phase purity and are slightly compressively strained relative to 3C-SiC. However, those samples with a measured Al fraction in the nucleation layer higher than 0.29 were predominantly of the hexagonal wurtzite phase, due to formation of wurtzite inclusions on various {111} facets of zb-GaN, thus indicating the optimal Al composition for phase-pure zb-GaN epilayer growth.

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Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Cited by 25 publications

References 94 publications

Study of the heavily p-type doping of cubic GaN with Mg

Study of the heavily p-type doping of cubic GaN with Mg

Diffusion-Driven Charge Transport in Light Emitting Devices

Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)

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Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Cited by 25 publications

References 94 publications

Study of the heavily p-type doping of cubic GaN with Mg

Study of the heavily p-type doping of cubic GaN with Mg

Diffusion-Driven Charge Transport in Light Emitting Devices

Influence of Al x Ga1−x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)

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Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)