Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique

Rosmeulen, M.; Breuil, L.; Lorenzini, Marilinda; Haspeslagh, L.; Houdt, J. Van; Meyer, K. De

doi:10.1016/j.sse.2004.03.017

Cited by 18 publications

(20 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In order to understand the physics of the endurance improvement for CHE-P operation, CP is selected to investigate the charge distribution in the program state after a number of P/E cycles [8][9][10] . Fig.6 shows the charge pumping current after 1k cycling under three different program methods.…”

Section: Discussionmentioning

confidence: 99%

Comparison of local programming method for multi-bit/level 90nm SONOS memory

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

View full text Add to dashboard Cite

Three different programming methods, the conventional CHE injection, CHE with a positive substrate bias (CHE-P) and pulse agitated substrate hot electron injection (PASHEI) were compared to obtain the reliable multi-bit/level operations in 90nm SONOS memory. It is found that both CHE-P and PASHEI methods can improve the cycling endurance and retention characteristic for 2 bits operations. The CHE-P method further exhibits the superior P/E windows and reliability characteristic in 4-bit/4-level programming operations. Charge pumping measurement illustrates that the good characteristic is due to the suppressing of the secondary electron injection (SEI) in the CHE-P programming process. It results in less spatial mismatch between electrons and holes in the nitride layer.

show abstract

Section: Discussionmentioning

confidence: 99%

Comparison of local programming method for multi-bit/level 90nm SONOS memory

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

View full text Add to dashboard Cite

show abstract

“…As known, other techniques, namely, CP and GIDL have been proposed in the literature to profile the charge in the nitride [8]- [10], [14]. The GIDL-based method has been used to qualitatively investigate the hole distribution in the erased cells [14].…”

Section: Comparison With Other Charge Profiling Methodsmentioning

confidence: 99%

“…This is demonstrated also by device simulations, showing that the GIDL current formulas similar to (3) and (4) are not accurate in profiling electron charge distributions in the programmed NROM cells. On the other hand, the CP technique requires a nontrivial dedicated experimental setup and a complex elaboration of measured data [8]- [10]. Furthermore, its application is strongly limited by several assumptions such as a monotonic V TR profile [8], [9], the absence of trapped charge in fresh devices [9], and a uniform density of surface states, that is also assumed to be unaffected by the program operation [8]- [10].…”

Section: Comparison With Other Charge Profiling Methodsmentioning

confidence: 99%

“…Some techniques have been proposed in the literature to profile the charge distribution in localized charge-trapping memory devices [8]- [14]. The charge-pumping (CP) technique is used in [8]- [10] to characterize the lateral charge distribution in local charge-trapping memory devices, but this technique requires a nontrivial dedicated experimental setup, and its accuracy has not been proved in this specific case.…”

Section: Introductionmentioning

confidence: 99%

“…The charge-pumping (CP) technique is used in [8]- [10] to characterize the lateral charge distribution in local charge-trapping memory devices, but this technique requires a nontrivial dedicated experimental setup, and its accuracy has not been proved in this specific case. Other authors employ I D -V GS measurements (that do not require a dedicated experimental setup) to profile charge distribution, providing some estimates of the length (L CN ) and density (ρ CN ) of charge distribution [11]- [14].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

$I_{D}$– $V_{\rm GS}$-Based Tools to Profile Charge Distributions on NROM Memory Devices

Padovani

Larcher

Pavan

et al. 2007

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should have a better endurance than their floating-gate counterparts, issues have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge-trapping material. Thus, a deep knowledge of charge distribution features is crucial for program/erase bias optimization, reliability predictions, and future scaling. In this paper, we will introduce and discuss two tools based on I D -V GS curves (i.e., subthreshold slope and I D temperature effects) which will be used to profile charge distribution. Simple formulas allowing to calculate charge distribution length and density will be derived, and their accuracy will be tested for cells programmed at different levels and under different bias conditions. Finally, we will discuss the limits of both tools when applied to erased NROM cells, i.e., cells having both electron and hole distributions in the nitride region above the junction.Index Terms-Device simulations, Flash memory, gate-induced drain leakage (GIDL), nitride-based trapping storage, NROM, semiconductor device reliability, trapped charge profiling.

show abstract