Characterization of low pressure chemically vapour- deposited thin silicon nitride films

Popova, L.; Antov, B.Z.; Shopov, A.; Sotirova, M.S.; Beshkov, G.; Stefanov, E.

doi:10.1016/0040-6090(84)90005-1

Cited by 9 publications

(6 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, in nonvolatile memory, the charge trap layer is used as a charge storage layer of silicon‐oxide‐nitride‐oxide‐silicon (SONOS)‐type memory, which is a promising candidate of three‐dimensional (3D) flash memory for next generation . Although SiN x has been studied for a long time and there are many methods to deposit SiN x thin films , there is still demand for new methods to ensure excellent step coverage and low‐thermal budget due to complex 3D structures and process flows.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Jang

Jeon

Kang

et al. 2014

Phys. Status Solidi A

View full text Add to dashboard Cite

We investigated the characteristics of silicon nitride (SiNx) thin films deposited by remote plasma atomic layer deposition (RPALD) using trisilyamine (TSA) and ammonia (NH3) plasma at low temperatures. Although the process window of SiNx thin films is 150–350 °C, considering the refractive index (RI), SiNx thin films deposited at 250–350 °C were focused on for analyses. All of the SiNx films were nearly stoichiometric, regardless of the deposition temperature. As the deposition temperature increased, the RI increased, while the hydrogen content decreased. The defect density also changed at higher deposition temperatures; as the deposition temperature increased, all of the trap densities increased because of the low‐hydrogen content in the SiNx thin films. The characteristics of the SiNx thin film deposited by RPALD could be controlled to adjust the defect density for charge trap flash memory applications by changing the deposition temperature.

show abstract

Section: Introductionmentioning

confidence: 99%

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Jang

Jeon

Kang

et al. 2014

Phys. Status Solidi A

View full text Add to dashboard Cite

show abstract

“…In the 300 °C-sputtered films, the density of 3.21 g=cm 3 and the refractive index of 2.06 are almost close to the bulk values, 21) that is, the density of 3.44 g=cm 3 and the refractive index of 1.95-2.05. 24,25) On the other hand, for the PECVD SiN x films, we plot the results of two groups of films with "N-rich" and "Si-rich" compositions. Here, the N-rich and Si-rich compositions correspond to nitrogen contents above 52 at.…”

Section: Resultsmentioning

confidence: 99%

Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics

Sato

Takeyama

Nakata

et al. 2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The characteristics of SiN x films deposited by reactive sputtering and plasma-enhanced chemical vapor deposition (PECVD) are examined to obtain high-density films at low deposition temperatures. PECVD SiN x films deposited at 200 °C show low densities of 2.14–2.20 g/cm3 regardless of their composition, while their refractive index varies depending on their composition. PECVD requires the substrate temperature to obtain high-density films, because a possible cause of low-density films is the amount of Si–H bond, rather than that of N–H bond, in the films originating from hydrogen incorporated by the insufficient decomposition of SiH4 molecules at low temperatures. The sputtered SiN x films with high density are obtained at a temperature lower than 200 °C and considered a promising candidate for insulating films at low process temperatures.

show abstract

“…It has been reported that the Si 3 N 4 layer grown by LPCVD has an amorphous structure. [8] The gradient appearing at the beginning of the spectrum is caused by this amorphous Si 3 N 4 layer. The XRD results confirm that the deposited Ir films have a polycrystalline structure with a preferential orientation of the (111) plane parallel to the substrate.…”

Section: Surface Characterizationmentioning

confidence: 99%

Growth, characterization and micro-pattern fabrication of iridium/Si3N4/Si(100) thin films

Zhou

Sun

et al. 2008

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

View full text Add to dashboard Cite

Iridium thin films have been deposited on Si 3 N 4 (100 nm)/Si(100) substrates by magnetron sputtering. And then iridium film micro-patterns were fabricated by ion milling technique. The atomic force microscopy (AFM) measurements reveal that there is a very flat and smooth surface with an average roughness of 0.64 nm for the iridium films. The X-ray diffraction also reveals that the deposited iridium films have a polycrystalline microstructure with (111) plane preferential orientation. The electrical resistivity of the iridium films was also measured and discussed.

show abstract

Characterization of low pressure chemically vapour- deposited thin silicon nitride films

Cited by 9 publications

References 14 publications

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics

Growth, characterization and micro-pattern fabrication of iridium/Si3N4/Si(100) thin films

Contact Info

Product

Resources

About