Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics

Abstract

The characteristics of SiN x films deposited by reactive sputtering and plasma-enhanced chemical vapor deposition (PECVD) are examined to obtain high-density films at low deposition temperatures. PECVD SiN x films deposited at 200 °C show low densities of 2.14–2.20 g/cm3 regardless of their composition, while their refractive index varies depending on their composition. PECVD requires the substrate temperature to obtain high-density films, because a possible cause of low-density films is the amount of Si–H bond, rather than that of N–H bond, in the films originating from hydrogen incorporated by the insufficient decomposition of SiH4 molecules at low temperatures. The sputtered SiN x films with high density are obtained at a temperature lower than 200 °C and considered a promising candidate for insulating films at low process temperatures.

Effect of H2 addition during PECVD on the moisture barrier property and environmental stability of H:SiNx film

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“…29,30 The physics of resin flow into a mold under pressure is similar to the seepage problem and so similar approaches have been used also to model the flow of resin into a mold containing fiber mats. 23,[31][32][33][34][35][36][37][38] The models are used in these cases to determine the resin flow front and mold filling times corresponding to different infiltration conditions.…”

“…Generally, Si-N bonds can induce the increase in film density of silicon nitride. 23 However, hydrogen-terminated bonds such as Si-H and N-H bonds do not significantly contribute to the increase in film density of silicon nitride. 23 As previously stated, it is known that the increase in film density is inversely proportional to the WVTR.…”

“…23 However, hydrogen-terminated bonds such as Si-H and N-H bonds do not significantly contribute to the increase in film density of silicon nitride. 23 As previously stated, it is known that the increase in film density is inversely proportional to the WVTR. Therefore, more Si-N bonds have an effect on increasing the film density and decreasing the WVTR.…”

“…29,30 The physics of resin under pressure is similar to the seepage pr lar approaches have been used also to mod into a mold containing fiber mats. 23,[31][32][33][34][35][36][37][38] T in these cases to determine the resin flow ing times corresponding to different infilt Preceramic polycarbosilane polymers as precursors to make ceramic fibers 10,3 trix. [7][8][9]40,41 The chemical and volume ch pany ceramization of the polymer during documented in several studies.…”