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The proton dynamics of poly(4-hydroxystyrene) (PHS) films were investigated using Coumarin 6 (C6). The acid density was 0.022 nm À3 at the exposure dose of 10 mC cm À2 (75 keV electron beam). The absorption intensity of C6 proton adducts was saturated at a certain concentration of C6, indicating an almost complete addition of protons at this C6 concentration. Protons can move in PHS films near C6 molecules even at room temperature. Also, the absorbed dose was estimated using 60 Corays. The acid yield can be well explained by an acid generation model involving the ionization of a base polymer.

The quantum defect method, generalised to the spin-orbit coupling scheme, has been used to calculate the oscillator strengths of the principal series for atomic caesium, taking into account the core polarisation produced by the valence electron. The good agreement obtained with respect to experimentally measured values has led us to carry out new calculations of generalised two-photon ionisation cross sections for the atomic caesium 6s ground state with linearly and circularly polarised incident radiation in the deep minimum region, related to destructive interferences, near the intermediate 7P resonance. A theoretical method previously developed was used; excellent agreement was obtained with respect to recent experimental data. The degree of spin polarisation of the ejected electrons has been calculated in the same region of incident photon energy.

Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer. The etch pit density was decreased to less than 80 cm −2 . These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications.

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In the sub-100-nm mass production of semiconductor devices, thin-film resists dispersing acid generator molecules, referred to as chemically amplified resists, have been used. Feature sizes in lithography are approaching the molecular scale with the rapid progress in miniaturization. With reductions in lateral dimensions, a decrease in resist thickness is inevitable and the effects of interfaces become significant. A requirement for ultrafine fabrication is the uniformity of resist components. In this work, the depth profile of the acid generator distribution was investigated by X-ray reflectivity measurement at SPring-8. The depth profile in thin resist films was clarified. It was found that the depth profile varies with acid generator concentration.

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