Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method

Ohshima, Etsuo; Niikura, Ikuo; Maeda, Katsumi; Sato, Masaru; Ito, Masumi; Fukuda, Tsuguo

doi:10.1016/j.jcrysgro.2003.08.019

Cited by 375 publications

(236 citation statements)

References 18 publications

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“…ppm according to the mass (e.g., $ Â10 for Li, $ Â3 for Al). The lowest impurity concentrations have been found by Ehrentraut et al 9 and Ohshima et al 11 in ZnO substrates originating from the þc region. Our lowest concentrations are comparable with these results.…”

Section: B Impurities In Hydrothermally Grown Znomentioning

confidence: 85%

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Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Läufer

Volbers

Eisermann

et al. 2011

Journal of Applied Physics

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Zinc oxide (ZnO) is regarded as a promising material for optoelectronic devices, due to its electronic properties. Solely, the difficulty in obtaining p-type ZnO impedes further progress. In this connection, the identification and quantification of impurities is a major demand. For quantitative information using secondary ion mass spectrometry (SIMS), so-called relative sensitivity factors (RSF) are mandatory. Such conversion factors did not yet exist for ZnO. In this work, we present the determined RSF values for ZnO using primary (ion implanted) as well as secondary (bulk doped) standards. These RSFs have been applied to commercially available ZnO substrates of different surface termination (a-plane, Zn-face, and O-face) to quantify the contained impurities. Although these ZnO substrates originate from the same single-crystal, we observe discrepancies in the impurity concentrations. These results cannot be attributed to surface termination dependent RSF values for ZnO.

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Section: B Impurities In Hydrothermally Grown Znomentioning

confidence: 85%

“…[9][10][11][12] Only the concentrations for lithium, potassium, aluminum, and iron have been measured by all groups. The large discrepancy of the values (Table III) may be attributed in parts to the use of different units (wt.…”

Section: B Impurities In Hydrothermally Grown Znomentioning

confidence: 99%

Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Läufer

Volbers

Eisermann

et al. 2011

Journal of Applied Physics

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“…Polarity also plays an important role in ZnO growth, affecting surface morphology, crystal quality, and dopant incorporation. 6 Existing methods for determining the polarity of ZnO surfaces, which include wet etching, 7 coaxial impact-collision ion scattering spectroscopy, 8 and x-ray diffraction, 9 are time consuming and difficult to perform in situ during film growth and device fabrication.…”

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confidence: 99%

“…14,15 Polarity-related differences in the XPS spectra of ZnO were investigated using c-axis, m-plane ͑1100͒, and a-plane ͑1120͒ bulk ZnO single crystal wafers ͑10ϫ 10ϫ 0.5 mm 3 ͒ grown using both the hydrothermal ͑HT͒ and pressurizedmelt ͑PM͒ techniques. 6,16 The carrier concentration of the HT and PM ZnO material was 10 13 -10 14 cm −3 and 10 16 -10 17 cm −3 , respectively, allowing the influence of bulk conductivity to also be investigated. Zn-polar and O-polar face samples were cut from the same double-sided polished c-axis wafers.…”

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confidence: 99%

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

Allen

Zemlyanov

Waterhouse

et al. 2011

Applied Physics Letters

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Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K(alpha) (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562308

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“…The lattice mismatch ratio is less than 2% [13,14] (ZnO is slightly larger). In recent years, ZnO wafers made from high-quality and large single crystalline have been reported, using hydrothermal growth method [15][16][17]. This method is currently thought to be at the threshold of real mass-production of ZnO crystals [18,19], indicating the availability of commercialization [20].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Zhang

Tse

et al. 2018

Phys. Rev. Materials

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Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin films on inexpensive and lattice matched ZnO substrate are both commercially and technologically desirable. However, the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces. Therefore, the intrinsic wetting condition forbids such heterostructures.As a result, poor crystal quality and 3D growth mode were obtained. To dramatically change the growth mode of the heterostructure, we propose to use hydrogen as a surfactant, confirmed by our first principles calculations. Stable H involved surface configurations and interfaces are investigated, with the help of newly developed algorithms. By applying the experimental Gibbs free energy of H2, we also predict the temperature and chemical potential of H, which is critical in experimental realizations of our strategy. This novel approach will for the first time make the growth of high quality GaN thin films on ZnO substrates possible. We believe that our new strategy may reduce the manufactory cost and improve the crystal quality and the efficiency of GaN based devices.

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Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method

Cited by 375 publications

References 18 publications

Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

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