Characterization of In₂₀Ge₁₅Sb₁₀Te₅₅Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer thin films for phase change memory application

“…In order to apply the Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer films to practical devices, the PCRAM cells based on [Ge 2 Sb 2 Te 5 (4 nm)/SnSe 2 (10 nm)] 6 were manufactured by CMOS technology. Fig.…”

“…2(b) shows the Kissinger plots of ln[(dT/dt)/Tc2] versus 1000/Tc for different Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer films to calculate the activation energy. It can be seen that the Ea of [Ge 2 Sb 2 Te 5 (2 nm)/ SnSe 2 (10 nm)] 8 , [Ge 2 Sb 2 Te 5 (4 nm)/SnSe 2 (10 nm)] 7 , [Ge 2 Sb 2 Te 5 (6 nm)/SnSe 2 (10 nm)] 6 , and [Ge 2 Sb 2 Te 5 (8 nm)/SnSe 2 (10 nm)] 5 films are 3.88 eV, 3.65 eV, 2.94 eV and 2.80 eV, respectively, which became smaller with decreasing of periodic number. It is due to that the interfacial atom arrangement which depended on surface reactivity is the main factor for the difference of activity energy among the films with the same constitution.…”

“…3 to estimate the data retention capability of the different Ge 2 Sb 2 Te 5 /SnSe 2 films. We can see that the temperature that [Ge 2 Sb 2 Te 5 (2 nm)/SnSe 2 (10 nm)] 8 , [Ge 2 Sb 2 Te 5 (4 nm)/SnSe 2 (10 nm)] 7 , [Ge 2 Sb 2 Te 5 (6 nm)/SnSe 2 (10 nm)] 6 and [Ge 2 Sb 2 Te 5 (8 nm)/SnSe 2 (10 nm)] 5 films can hold for 10 years are 110 • C, 99 • C, 89 • C and 85 • C, respectively. The 10 year data retention temperature of the Ge 2 Sb 2 Te 5 /SnSe 2 multilayer films declined with increasing of Ge 2 Sb 2 Te 5 layer, which resulted from the lower thermal stability of Ge 2 Sb 2 Te 5 than SnSe 2 mentioned before.…”

“…The distinguishing feature of these two phases mainly utilizes the difference of resistance between two states which can be easily measured by electrical methods. Nowadays, scientists mostly pay their attention on Ge-Sb-Te system in phase change materials since Ge 2 Sb 2 Te 5 is the most mature product [5][6][7] which can be applied to practical devices, not to mention Ge 2 Sb 2 Te 5 itself. Researchers adopted many methods to improve its performance.…”

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

“…But the relatively low crystallization temperature of GST (about 165°C) affects severely the thermal stability of amorphous state, making PCRAM not suitable for some high-temperature application. As is well known, some consumer products and automotive systems require 10-year data retention at temperatures higher than 125°C [7]. However, the PCRAM cells using GST film only have 10-year data retention at 85°C.…”