Articles you may be interested inHigh-temperature ferroelectric behaviors of poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with electroactive interlayers J. Appl. Phys. 111, 064506 (2012); 10.1063/1.3699051 Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics J. Appl. Phys. 108, 094102 (2010); 10.1063/1.3500428 Interacting and noninteracting dipole systems in ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer J. Appl. Phys. 108, 084109 (2010); 10.1063/1.3499614 Domain stabilization effect of interlayer on ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin film Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications

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The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change randomaccess memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

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We demonstrated the operation of phase-change memory cells that enabled 1.

In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require electric charge storing. The possibility of phase-change random access memory (PRAM) or resistive-change RAM (ReRAM) replacing ultrahigh-density NAND flash memories has been discussed; however, there are many issues to overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and MRAMs are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For the successful application of new nonvolatile semiconductor memories, they must be practically utilized in new fields in which flash memories are not applicable, and the technology for them must be developed.

Large-scale integrated fabrication in a H2 containing atmosphere, for example, during the passivation process, can cause serious damage in metal/Pb(Zr,Ti)O3/metal capacitors (i.e., Pt/PZT/Pt capacitors). To reveal the cause of the H2 damage, we investigated the behavior of hysteresis curves and the leakage current of capacitors with a top electrode of Pt, Pd, Au, or Ag. Capacitors with a top electrode of Au or Ag are more resistant to the H2 annealing damage than those of Pt or Pd. We found that the H2 damage was strongly affected by the catalytic activity and adsorptive properties of the top electrode when exposed to H2.

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