Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-μA standard 0.13μm CMOS operations

Abstract

We demonstrated the operation of phase-change memory cells that enabled 1.

Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications

“…13) and in oxygen doped memory cells (Matsuzaki et al, 2005). Moreover, increase of the crystal grain size has been also reported in 6 at.…”

Characteristics of phase transition in boron‐implanted Ge2Sb2Te5 thin films for phase change memory applications

“…Some of them can also suppress the GST grain growth as well as enhance its thermal stability. [7,11,12,[14][15][16] In addition, it has been reported that doping boron is also favorable for the optical and electrical properties of Ge-Sb-Te ternary alloys. [17][18][19] Nevertheless, thus far most studies have focused on incorporating impurities into phase change materials using the reactive magnetron cosputtering technique.…”

“…Some studies have proved that doping impurities is an effective way to optimize the intrinsic properties of GST. For example, incorporation of elements such as nitrogen, [7][8][9][10][11][12] oxygen, [11][12][13][14] and silicon [15,16] into GST indeed increases the GST resistivity, thus reducing the programming current. Some of them can also suppress the GST grain growth as well as enhance its thermal stability.…”

Overview of emerging semiconductor non-volatile memories

“…Therefore it can be miniaturized easily. Most commonly used materials for PCRAM are Ge 2 Sb 2 Te 5 and Sb 2 Te 3 but materials doped with impurities such as nitrogen or oxygen also have been studied to improve operation speed or thermal stability [22,23,24,25]. The operating principle of PCRAM is based on the phase change of chalcogenide material from amorphous to crystal, or vice versa, at reasonably low temperature around 600 C [26].…”