Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer thin films for phase change memory application

Wen, Tianlong; Zhai, Jiwei; Lai, Tianshu; Wang, Changzhou; Song, Sannian; Zhang, Song

doi:10.1016/j.apsusc.2014.07.138

Cited by 16 publications

(6 citation statements)

References 18 publications

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“…It can be seen that the films have a larger crystallization temperature, T c , at higher heating rates, which may be due to the fact that atoms cannot diffuse rapidly enough at faster heating rates [37]. The resistivity in situ is measured at various heating rates (dT/dt) and then the crystallization activation energy (E a ) can be calculated by the Kissinger equation [38,39]: ] and 1/T c . The crystallization activation energy (E a ) can be obtained from the slope.…”

Section: Resultsmentioning

confidence: 99%

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Huang¹,

Wu²,

Xu³

et al. 2022

J. Phys. D: Appl. Phys.

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Superlattice-like Ti/Sb (SLL Ti/Sb) thin films were proposed and investigated from the points of physical properties, structural characteristics and electronic application. The different structural SLL Ti/Sb thin films with different thickness ratios were deposited by magnetron alternate sputtering. In-situ resistance-temperature measurement indicates that the crystallization temperature, crystallization activation energy and data retention capacity increase significantly and the resistance drift index become smaller with the increment in thickness ratio of Ti to Sb layer, meaning the higher amorphous thermal stability and reliability of SLL Ti/Sb thin films. X-ray diffraction and Raman spectra reveal that the inserted titanium layer can inhibit the grain growth and refine the grain size, causing the remarkable improvement of thermal stability and crystallization rate. The analysis of X-ray reflectivity and atomic force microscopy demonstrate that the thickness fluctuation of SLL Ti/Sb thin films becomes smaller and the surface morphology becomes smoother, comparing with the single Sb layer thin film. The Avrami exponent of (Ti3Sb7)5 thin film reflects the growth-dominated crystallization mechanism, meaning the rapid phase transition rate. PCM cells based on (Ti3Sb7)5 thin film can realize the reversible transition at the electrical pulse with the width of 100 ns and the RESET power consumption is much lower than that of Ge2Sb2Te5. The above results strongly prove that the suitable superlattice-like structure of Ti/Sb phase change films have the tremendous potential application for the electronic storage with high thermal stability and low power consumption.

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Section: Resultsmentioning

confidence: 99%

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Huang¹,

Wu²,

Xu³

et al. 2022

J. Phys. D: Appl. Phys.

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“…The layered structure shows monolayers consisting of tilted octahedra isostructural to 1T transition metal dichalcogenides (Figure c,d). It is an n-type semiconductor with an indirect band gap of 1.0 eV suitable for application in solar cells, , gas sensors, − field-effect transistors, − capacitors, and phase change devices − and as anode material for Li/Na-ion batteries. , …”

Section: Introductionmentioning

confidence: 99%

“…All spectra were referenced to the C 1s signal (C−C bonds) at 284.8 eV. Curve fitting was performed using a Gaussian−Lorentzian peak shape GL(30) in combination with Shirley background subtraction in the CasaXPS software (Casa Software Ltd.…”

mentioning

confidence: 99%

Direct Synthesis of Two-Dimensional SnSe and SnSe₂ through Molecular Scale Preorganization

et al. 2023

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Two-dimensional tin monoselenide (SnSe) and tin diselenide (SnSe2) materials were efficiently produced by the thermolysis of molecular compounds based on a new class of seleno-ligands. Main group metal chalcogenides are of fundamental interest due to their layered structures, thickness-dependent modulation in electronic structure, and small effective mass, which make them attractive candidates for optoelectronic applications. We demonstrate here the synthesis of stable tin selenide precursors by in situ reductive bond cleavage in the dimeric diselenide ligand (SeC2H4N(Me)C2H4Se)2 in the presence of SnCl4. New molecular precursors [SnIV(SeC2H4N(Me)C2H4Se)2], [SnIVCl2(SeC2H4N(Me)C2H4Se)], and [SnIV(SC2H4N(Me)C2H4S)(SeC2H4N(Me)C2H4Se)] were thoroughly characterized by multinuclear magnetic resonance studies and single-crystal X-ray diffraction analysis that revealed the Sn(IV) center to be octahedrally coordinated by two tridentate dianionic chelating ligands or trigonally pyramidally coordinated by one chelating ligand and two chlorido ligands. Preorganization of metal–selenium bonds in both compounds offered direct and reproducible synthetic access to two-dimensional tin chalcogenides (SnSe and SnSe2) via simple adjustment of the pyrolysis temperature. Additionally, SnSe2 and SnS x Se2–x particles could be successfully synthesized by microwave-assisted decomposition of the molecular precursors, which was unambiguously corroborated by both experimental and computational analyses that explained the formation of a selenium rich SnS x Se2–x phase from a single molecular precursor containing both Sn–Se and Sn–S bonds.

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“…28 On the other hand, the performance advantages of the two materials can be effectively combined and coupled through the multilayer interface to obtain more excellent comprehensive performance. 29 Thus, GeSb/Sb multilayer films based on Si/SiO 2 substrate were prepared, and the phase transition parameters were tuned by changing the layer thicknesses of the two materials. The phase transition properties, resistance drift, microstructure, density, variation, electrical, properties, and surface topography of PCRAM devices were explored by testing GeSb/Sb multilayer films with different thickness ratios.…”

Section: Introductionmentioning

confidence: 99%

“…On the one hand, the similarity in lattice structure of the two materials can be fully utilized to avoid the formation of mismatch dislocations 28 . On the other hand, the performance advantages of the two materials can be effectively combined and coupled through the multilayer interface to obtain more excellent comprehensive performance 29 . Thus, GeSb/Sb multilayer films based on Si/SiO 2 substrate were prepared, and the phase transition parameters were tuned by changing the layer thicknesses of the two materials.…”

Section: Introductionmentioning

confidence: 99%

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multilayer thin films

Wang,

Hu,

Zhang

et al. 2023

J Am Ceram Soc.

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Thermal stability and phase transition rate are two important issues that restrict the engineering applications of phase change memories. In this paper, GeSb/Sb multilayer films were prepared by multilayer stacking, and their phase transition properties were investigated. GeSb/Sb multilayer films had higher crystallization temperature, better data retention, and lower resistance drift than pure Sb films, which indicated that they had excellent thermal stability and accuracy of resistance identification. The test results of X‐ray diffraction and atomic force microscopy showed that GeSb spacer layers could inhibit grain growth of Sb film layers, thus reducing the roughness and potential fluctuation of the film surface. X‐ray reflectivity experiments showed that the GeSb/Sb multilayer films before and after crystallization had small volume changes. The devices based on [GeSb(7 nm)/Sb(3 nm)]8 multilayer films could achieve reversible resistive transition operation between SET and RESET at a pulse width of 10 ns, showing satisfactory transition rate and operational power consumption. The low resistance drift and ultra‐fast phase transition speed make GeSb/Sb multilayer films one of the promising choices for phase change memories.

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Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer thin films for phase change memory application

Cited by 16 publications

References 18 publications

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Direct Synthesis of Two-Dimensional SnSe and SnSe₂ through Molecular Scale Preorganization

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multilayer thin films

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Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer thin films for phase change memory application

Cited by 16 publications

References 18 publications

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Direct Synthesis of Two-Dimensional SnSe and SnSe2 through Molecular Scale Preorganization

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multilayer thin films

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Product

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Direct Synthesis of Two-Dimensional SnSe and SnSe₂ through Molecular Scale Preorganization