A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10, and a specific detectivity up to 3.3 × 10 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

The family of flaviviruses is one of the most medically important groups of emerging arthropod-borne viruses. Host cell cytoskeletons have been reported to have close contact with flaviviruses during virus entry, intracellular transport, replication, and egress process, although many detailed mechanisms are still unclear. This article provides a brief overview of the function of the most prominent flaviviruses-induced or-hijacked cytoskeletal structures including actin, microtubules and intermediate filaments, mainly focus on infection by dengue virus, Zika virus and West Nile virus. We suggest that virus interaction with host cytoskeleton to be an interesting area of future research.

A new ternary-alloy, zinc−tin nitride (ZnSnN 2 ), is considered as one of the most promising absorber materials for photovoltaic applications due to its ideal band gap, rich ternary-chemistry, robust optical absorption, and low cost. In the present work, we demonstrate the ZnSnN 2 -based P−N and P−i−N heterojunctions to study the band offset engineering for the development of high-efficiency inorganic solar cell. The P−i−N heterojunction is composed of p-SnO, i-Al 2 O 3 , and n-ZnSnN 2 constituents. The inclusion of the i-Al 2 O 3 buffer layer has remarkably improved the solar cell efficiency by regulating the conduction band offset and interface energy gap. It is believed that our present work will offer a promising approach to manufacture ZnSnN 2 -based heterojunctions with better band alignment for novel photovoltaic applications. KEYWORDS: ZnSnN 2 thin films, Al 2 O 3 buffer layer, interface energy gap, conduction band offset, band alignment engineering, heterojunction solar cell