Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application

Chen, Liangliang; Song, Sannian; Zhang, Song; Li, Le; Zhang, Zhonghua; Qin, Zheng; Zhang, Xin; Zhu, Xiuwei; Lu, Luyao; Shao, Hehong

doi:10.1002/pssa.201532536

Cited by 14 publications

(4 citation statements)

References 38 publications

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“…Therefore, as the crystallization temperature of the PCM increases, the operating speed of PCRAM becomes slow because it takes time to heat up the PCM by Joule heating. Such a tendency can be confirmed from the relationship between the crystallization temperature of the as-deposited amorphous state and the operating speed of various PCMs, as shown in Figure . ,,,− There is a trade-off relationship between the thermal stability and operating speed. For future PCRAM applications, operating speed is expected to be below at least 50 ns .…”

Section: Discussionmentioning

confidence: 74%

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Hatayama

Sutou

Shindo

et al. 2018

ACS Appl. Mater. Interfaces

118

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Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with CrGeTe (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a GeSbTe memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

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Section: Discussionmentioning

confidence: 74%

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Hatayama

Sutou

Shindo

et al. 2018

ACS Appl. Mater. Interfaces

118

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“…automotive applications [5] and to realize a high thermal disturbance resistance in a highly scaled PCRAM [6], high thermal stability PCMs in amorphous phase are required. Some PCMs, such as Si 10.7 Sb 39.5 Te 49.8 , Ga 2 Te 3 Sb 5 , Al 1.3 Sb 3 Te, GaSb, Sb 44 Te 11 Se 45 , and Cu 2 GeTe 3 , have been reported to show a much higher T x compared with GST [4,[7][8][9][10][11][12]. Particularly, it has been reported that in trans ition metalincluded PCM, Cu 2 GeTe 3 , p -d interaction between Cu and Te plays an important role in the fast reversible phase change between the amorphous and crystalline phases, which is fundamentally different from that in conventional s-p -bonded PCMs like GST [13][14][15], indicating that transition metalincluded PCM opens up new avenues in materials exploration for PCRAM.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport mechanism of the amorphous phase in Cr₂Ge₂Te₆ phase change material

Hatayama

Sutou

Ando

et al. 2019

J. Phys. D: Appl. Phys.

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A Cr 2 Ge 2 Te 6 (CrGT) phase change material (PCM) was studied. Different from conventional PCMs, it shows an inverse resistance change between a low-resistance amorphous phase and a high-resistance crystalline phase. Moreover, the anomalous low resistivity in the amorphous CrGT is considered to be due to a large carrier density, but the mechanism of electrical transport is still not clear. In this study, the electrical transport mechanism of the amorphous CrGT was discussed based on the temperature dependence of the resistivity, carrier density, mobility, and current-voltage characteristics. Above 300 K, the conduction mechanism of the amorphous CrGT was thermally activated band conduction, which is different from the conventional Ge-Sb-Te PCMs that show Poole-Frenkel conduction in the amorphous phase. Below 300 K, the amorphous CrGT shows hopping conduction, changing from variable range hopping (Mott VRH) to Efros-Shklovskii variable range hopping (ES-VRH) with decreasing temperature. The crossover from Mott VRH to ES-VRH was observed at around 200 K. Furthermore, the Fermi level was not pinned at the center of bandgap; instead, it was located near the valence band.

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“…The smaller grain sizes can help to reduce the residual stresses inside the film because of the reduced chance of diffusion or sliding at the grain boundaries [28]. The interfacial characteristics and cycling performance of PCM devices are impacted by the surface roughness of phase change materials [29].…”

Section: Resultsmentioning

confidence: 99%

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn₁₅Sb₈₅ thin film

et al. 2023

Nanotechnology

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The effects of yttrium dopants on the phase change behaviour and microstructure of Sn15Sb85 films have been systematically investigated. The yttrium-doped Sn15Sb85 film has the higher phase transition temperature, ten-year data retention ability and crystallization activation energy, which represent the great improvement of thermal stability and data retention. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy reveal that the amorphous Sn and Y components restrict the grain growth and decrease the grain size. Raman mode typically associated with Sb are altered when the substance crystallized. Atomic force microscopy results show that the surface morphology of the doped films becomes smoother. T-shaped phase change storage cells based on yttrium-doped Sn15Sb85 films exhibit the lower power consumption. The results demonstrate that the crystallization characteristics of Sn15Sb85 film can be tuned and optimized through yttrium dopant for the excellent performances of phase change memory.

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Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application

Cited by 14 publications

References 38 publications

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Electrical transport mechanism of the amorphous phase in Cr₂Ge₂Te₆ phase change material

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn₁₅Sb₈₅ thin film

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Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application

Cited by 14 publications

References 38 publications

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization

Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film

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Product

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Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization

Electrical transport mechanism of the amorphous phase in Cr₂Ge₂Te₆ phase change material

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn₁₅Sb₈₅ thin film