Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

Djezzar, Boualem; Smatti, A.; Amrouche, Abdelwaheb; Kachouane, Mouloud

doi:10.1109/23.914462

Cited by 32 publications

(7 citation statements)

References 20 publications

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“…For instance, the transistors and capacitors measured in [21], 10V biased during irradiation, exhibit displacements of 1.33 mV/Gy(SiO 2 ) for a total dose of 300 Gy(SiO 2 ), decreasing to 0.8 mV/Gy(SiO 2 ) for 1kGy(SiO 2 ). Similarly, 1.2 mV/Gy(SiO 2 ) is obtained at 500 Gy(SiO 2 ) in [22], and 0.4 mV/Gy(SiO 2 ) at 1 kGy(SiO 2 ) is obtained in [23], both with n-channel transistors. Finally, in [24], 0.625 mV/Gy(SiO 2 ) at 1.2 kGy(SiO 2 ) is obtained with 5 V biased MOS capacitors.…”

Section: ) Radiation Experiments and Discussionmentioning

confidence: 99%

Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Domínguez-Pumar

Bheesayagari

Gorreta

et al. 2018

IEEE Trans. Ind. Electron.

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Abstract-The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias, and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device.

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Section: ) Radiation Experiments and Discussionmentioning

confidence: 99%

Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Domínguez-Pumar

Bheesayagari

Gorreta

et al. 2018

IEEE Trans. Ind. Electron.

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“…For example, in Si-MOSFETs, the shorter channel induced more oxide-trapped charges. 32,33) As shown in Fig. 7(a), the narrower channel in the SiC-NMOSFETs also implies the presence of more oxide-trapped charges, and the channel width was controlled by Al gatemetal width.…”

Section: (B) 5(d)mentioning

confidence: 98%

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Muraoka

Sezaki

Ishikawa

et al. 2019

Jpn. J. Appl. Phys.

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4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated with gamma-rays up to 850 kGy at room temperature. Above 600 kGy, the field effect mobility increased from 12 to 18 cm2 V−1 s−1. The narrower channel in the NMOSFETs enhanced radiation responses, such as mobility enhancement and threshold voltage shift. These results indicate that the edge of the channel significantly modifies the electrical characteristics.

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“…Regarding Radiation Hardened-By-Designed (RHBD) techniques, a popular layout technique applied to digital circuits to cope with TID is the Enclosed Layout Transistor (ELT) [11,12]. However, design of analog circuits with this technique is not a very simple task, since it does not allow arbitrary W/L ratios required in analog designs.…”

Section: Simulation Setupmentioning

confidence: 99%

“…In [9,10] experimental radiation data regarding the output offset and open loop gain of bipolar and CMOS commercial Operational Amplifiers (OpAmps) were presented. Considerations on the impact of transistors sizing on the TID effects and radiation-hardening-by-design approaches using ELT (Enclosed Layout Transistor) are discussed in [11,12].…”

Section: Introductionmentioning

confidence: 99%

Reliability Analysis of 0.5μm CMOS Operational Amplifiers under TID Effects

Cardoso¹,

Balen²,

Lubaszewski³

et al. 2020

JICS

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Analog integrated circuits operating in radiation environments. In previous irradiation experiments performed on a switched-capacitor filter, implemented in a programmable analog array, it was observed a sudden recovery of the device performance during the irradiation, while increasing the accumulated dose. In some cases the considered performance parameters (such as the total harmonic distortion) may even be enhanced if compared to the pre-irradiation measurements, in specific accumulated dose intervals. This behavior is associated to partial inactivity windows in the internal components of the device. Spice simulations considering two complementary architectures of a simple CMOS Operational Amplifier (OpAmp) are performed, aiming to understand the origins of this effect. Results indicate that shifts on the operating point of the amplifier building blocks are responsible for the degradation and recovery of the OpAmp performance. Results also show that specific architectures, as well as, application constraints (such as the external feedback and the input signal amplitude and frequency) may result in different robustness levels related to the linear applications of the OpAmps in radiation environments.

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Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

Cited by 32 publications

References 20 publications

Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Reliability Analysis of 0.5μm CMOS Operational Amplifiers under TID Effects

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