Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Muraoka, Kosuke; Sezaki, Hiroshi; Ishikawa, Seiji; Maeda, Takuya; Makino, Takahiro; Takeyama, Akinori; Ohshima, Takeshi; Kuroki, Shin-Ichiro

doi:10.7567/1347-4065/ab2dab

Cited by 3 publications

(3 citation statements)

References 41 publications

(50 reference statements)

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“…20) Unlike other elements, it has been reported that Ba, an alkaline earth element, does not behave as a mobile ion because of its large ion size. 12,21) In previous reports, Ba of a few monolayers or less was deposited onto SiC substrates beneath cap SiO 2 dielectrics, followed by oxidation annealing. Fujita et al demonstrated that metal-enhanced oxidation (MEO) occurs during annealing at above 850 °C in the presence of Ba.…”

Section: Introductionmentioning

confidence: 99%

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Sekine

Okada

Kumazawa

et al. 2021

Jpn. J. Appl. Phys.

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Field effect mobility was improved in a 4H-SiC (0001) metal-oxide-semiconductor field-effect transistor with Ba diffusion into the gate oxide and NO passivation. The Ba diffusion process caused Ba interface passivation, which suppressed oxide surface roughening. Free carrier mobility and free carrier density were evaluated through Hall effect measurements using the Van der Pauw technique at room temperature. Passivation by Ba or NO was found to have no effect on free carrier mobility but contributed to increased free carrier density. A free carrier ratio of up to 70% was achieved through combined Ba diffusion and NO passivation.

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Section: Introductionmentioning

confidence: 99%

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Sekine

Okada

Kumazawa

et al. 2021

Jpn. J. Appl. Phys.

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“…We have already demonstrated total ionizing dose effect (TID) resistance of 4H-SiC MOSFETs and some reports also showed that the MOSFETs work even after high irradiation doses exceeding 100 Mrad [12][13][14]. The thick embedded oxide film makes SOI devices relatively vulnerable to TID, however, we suggest that TID effects can be reduced by thinning the BOX layer to the same thickness as the gate oxide film.…”

Section: Introductionmentioning

confidence: 71%

“…These properties mean SiC crystal has a hardness to radiation and has potential for electronic devices with low soft errors. Operation of 4H-SiC bipolar junction transistors (BJTs), junction field effect transistors (JFETs), and metal-oxide-semiconductor transistors (MOSFETs) have been demonstrated in high temperature environments [4][5][6][7][8][9][10][11][12][13][14]. In terms of the image sensor, 4H-SiC has already demonstrated operation as a UV imaging system with 256 pixels at 400°C [15].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Meguro

Takeyama

Ohshima

et al. 2022

IEEE Electron Device Lett.

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For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The hybrid pixel device consists of one Si photodiode and three 4H-SiC nMOSFETs. At fabrication, SOI substrate was directly bonded on 4H-SiC substrate via SiO2. After bonding, the base silicon substrate and Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ 4H-SiC substrate, the SOI-Si photodiodes and 4H-SiC nMOSFETs were integrated in the same substrate. As a result, a response of the SOI-Si/ 4H-SiC hybrid pixel device to light illumination was successfully demonstrated.

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Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

Van Cuong,

Meguro,

Ishikawa

et al. 2024

Jpn. J. Appl. Phys.

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In this research, the thermal stability of single stage amplifier based on 4H-SiC MOSFET with a TiN gate electrode was investigated. The results show that, after 100-hour aging at 400℃ in N2 ambient, the amplifier maintained good performance with stable voltage gain. The thermal stability of the amplifier results from the stability of Ni/Nb/4H-SiC source/drain ohmic contact, implanted load resistor, and MOS structure with the TiN gate electrode. The results obtained from the 4H-SiC MOS structure show that the interface trap density at the SiO2/SiC decreases during the aging process. While the gate leakage current of the capacitor based on Al gate electrode increases, it remains stable in structures with TiN gate electrodes after 100-hour aging. The results obtained in this study indicate that TiN is promising for the gate electrode of 4H-SiC MOSFETs for high-temperature applications.

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Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Cited by 3 publications

References 41 publications

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

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