Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Domínguez-Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta, Sergi; Lopez-Rodriguez, Gema; Pons-Nin, Joan

doi:10.1109/tie.2017.2748033

Cited by 8 publications

(4 citation statements)

References 22 publications

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“…The voltage shift is an indirect inference to the changes in the net charge trapped in the dielectric. This is compatible with the observations in [27], which indicated that charge injection changed when the net charge levels around which they were studied were far apart one of the other. In practice, this means that constant multi-exponential charge models are valid for MOS capacitors, so long as the total displacement of the net charge is not significantly changed.…”

Section: A Building the Dr Modelsupporting

confidence: 90%

“…To mitigate this problem, extensive design and shielding strategies are routinely implemented. Besides, compensation of charge trapped in SiO 2 MOS capacitors induced by gamma radiation using sigma-delta controls has been demonstrated recently in [27]. Ionizing radiation such as gamma and Xray radiation can be understood as an external disturbance in a sliding mode controller affecting the net charge in the dielectric [28].…”

Section: Introductionmentioning

confidence: 99%

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Diffusive Representation and Sliding Mode Control of Charge Trapping in Al$_2$O$_3$ MOS Capacitors

Bheesayagari

Pons-Nin

Atienza

et al. 2019

IEEE Trans. Ind. Electron.

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The objective of this paper is to introduce a modeling strategy to characterize the dynamics of the charge trapped in the dielectric of MOS capacitors, using Diffusive Representation. Experimental corroboration is presented with MOS capacitors made of Alumina in three different scenarios. First, the model predictions are compared with the trapped charge evolution due to arbitrary voltage excitations. Second, the predictions are compared with the measurements of a device in which a sigmadelta control of trapped charge is implemented. Finally, the time evolution when the device is simultaneously controlled and irradiated with X-rays is compared with the predictions. In all cases, a good matching between the models and the measurements is obtained.

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Section: A Building the Dr Modelsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Diffusive Representation and Sliding Mode Control of Charge Trapping in Al$_2$O$_3$ MOS Capacitors

Bheesayagari

Pons-Nin

Atienza

et al. 2019

IEEE Trans. Ind. Electron.

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“…One possible explanation for the interesting recovery behavior after about 2.4 krad (9.3 minutes at the dose rate of 256 rad/min) is a result of the 1.7 MHz switching frequency of the regulator design. Rapidly changing bias conditions have been shown to improve recombination rates [28]. At the 14 krad point of failure, once the output voltage has dropped to 1.3 V it is feasible a localized net-gain of e/h recombination could form as a result of the lower bias.…”

Section: Experimental Results: Switching Regulatorsmentioning

confidence: 99%

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Holliday

Heuser

Manchester

et al. 2022

IEEE Trans. Aerosp. Electron. Syst.

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The survivability of microelectronic devices in ionizing radiation environments drives spacecraft design, capability, mission scope, and cost. This work exploits the periodic nature of many space radiation environments to extend device lifetimes without additional shielding or modifications to the semiconductor architecture. We propose a technique for improving component lifetimes through reduced total-dose accumulation by modulating device bias during periods of intense irradiation. Simulation of this "dynamic biasing" technique applied to singletransistor devices in a typical low-Earth orbit results in an increase of component life from 114 days to 477 days (318% improvement) at the expense of 5% down time (95% duty cycle). The biasing technique is also experimentally demonstrated using gamma radiation to study three commercial devices spanning a range of integrated circuit complexity in 109 rad/min and 256 rad/min dose rate conditions. The demonstrated improvements in device lifetimes using the proposed dynamic biasing technique lays a foundation for more effective use of modern microelectronics for space applications. Analogous to the role real-time temperature monitoring plays in maximizing modern processor performance, the proposed dynamic biasing technique is a means of intelligently responding to the radiation environment and capable of becoming an integral tool in optimizing component lifetimes in space.

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“…One possible explanation for the interesting recovery behavior after about 2.4 krad (9.3 minutes at the dose rate of 256 rad/min) is a result of the 1.7 MHz switching frequency of the regulator design. Rapidly changing bias conditions have been shown to improve recombination rates [22]. At the 14 krad point of failure, once the output voltage has dropped to 1.3 V it is feasible a localized net-gain of e/h recombination could form as a result of the lower bias.…”

Section: Experimental Results: Switching Regulatorsmentioning

confidence: 99%

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices

Holliday¹,

Heuser²,

Manchester³

et al. 2021

Preprint

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This work proposes a "dynamic biasing" technique and uses on-orbit simulations with experimental testing to demonstrate up to a 16x improvement in total-dose lifetimes for COTS devices without additional shielding or modifications to the chip. Building upon this foundation, the dynamic biasing technique offers a unique opportunity for microelectronic systems to begin intelligently responding in real-time to their radiation environment. We believe this fundamental technique can become an integral tool to countless future electronic systems in space.<br>

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Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

Cited by 8 publications

References 22 publications

Diffusive Representation and Sliding Mode Control of Charge Trapping in Al$_2$O$_3$ MOS Capacitors

Diffusive Representation and Sliding Mode Control of Charge Trapping in Al$_2$O$_3$ MOS Capacitors

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices

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