Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

Ólafsson, Halldór; Sveinbjörnsson, Einar Ö.; Rudenko, Tamara; Tyagulski, I.P.; Osiyuk, I. N.; Lysenko, V. S.

doi:10.1063/1.1424479

Cited by 21 publications

(17 citation statements)

References 14 publications

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“…However, to discuss accurately the effects on l FE , the total D IT including the interface states that trap electrons at high gate voltage (or electric field) is necessary. Other techniques such as Halleffect measurements [23][24][25] or thermally-stimulated-current measurements 26,27 are necessary to evaluate the interface states at high gate voltage (or electric field). Okamoto et al showed the effect of trapped electrons that increase with oxide electric field on the field-effect mobility.…”

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confidence: 99%

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Yoshioka¹,

Senzaki²,

Shimozato³

et al. 2014

Appl. Phys. Lett.

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Articles you may be interested inInfluence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012); 10.1063/1.4759354 Effect of the oxidation process on the electrical characteristics of 4 H -Si C p -channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 89, 023502 (2006); 10.1063/1.2221400 Correlation between channel mobility and shallow interface traps in SiC metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 92, 6230 (2002); 10.1063/1.1513210Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (1120) face Appl.

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mentioning

confidence: 99%

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Yoshioka¹,

Senzaki²,

Shimozato³

et al. 2014

Appl. Phys. Lett.

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“…In principle, detection of defects can be done either indirectly, through their effect on the physical/electrical properties of the semiconductor, or directly by 3D structural imaging. The physical/electrical activity of the defects can be detected and characterized by techniques such as ESR, 111–115 NMR, 116–118 deep level transient spectroscopy, 119–121 and thermally stimulated current 122,123 . For large enough samples, these types of measurements can be used to detect even low densities of electrically active defects (introducing levels in the forbidden energy gap).…”

Section: Possible Applicationsmentioning

confidence: 99%

ESR Microscopy and Nanoscopy with “Induction” Detection

Blank

Freed

2006

Israel Journal of Chemistry

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The current state‐of‐the‐art in the fields of Nuclear Magnetic Resonance (NMR) and Electron Spin Resonance (ESR) micro‐imaging is reviewed. Special attention is given to the uniqueness and the advantages of the conventional “induction” detection method with respect to other emerging sensitive magnetic resonance detection and imaging techniques. Following this, a theoretical description of the factors affecting the sensitivity and resolution in induction detection ESR is provided. Based on the theory, new approaches to substantially improve ESR capabilities, both at room temperature and at low cryogenic temperatures, are discussed. Representative results of experiments conducted at room temperature and at frequencies of 10–16 GHz show that with test samples, a sensitivity of ∼107 electron spins and a resolution of ∼3 microns are currently available. The results confirm the validity of the theoretical approach and confirm the value of striving for even higher frequencies and lower temperatures, in order to further improve the performance Finally, some of the current and potential applications of ESR microscopy and nanoscopy (involving imaging with a resolution of ∼100 nm or better) are presented.

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“…Lysenko et al 11 and Ó lafsson et al 12 observed for the case of 6H-SiC a dependence of the 40-K peak on the accumulation field. In our work, this dependence was observed for the 80-K peak in 4H-SiC (e.g., Fig.…”

Section: Tsc Spectra Of Mosfet Source/body N + -P Junctionmentioning

confidence: 99%

“…10 Previous reports of TSC measurements on SiC have focused on metal-oxide-semiconductor (MOS) capacitors fabricated on n-and p-type 4H-and 6H-epitaxial layers. [11][12][13][14] Studies of p-type 6H-SiC MOS capacitors by Lysenko et al 11 and Ó lafsson et al 12 showed two main peaks in the TSC spectra, located at approximately 50 K and 70 K. The origin of the former peak was attributed to interface states, whereas the latter was concluded to be due to Al acceptors (E A = 160 meV to 230 meV). [15][16][17] On n-type 4H-SiC, Rudenko et al observed TSC peaks near 40 K, 90 K, and 150 K. 13,14 The 40-K peak was attributed to N donor ionization, and the other two peaks were due to the presence of interface states near the conduction band.…”

Section: Introductionmentioning

confidence: 99%

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

Tadjer

Stahlbush

Hobart

et al. 2010

Journal of Elec Materi

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Carrier traps in 4H-SiC metal-oxide-semiconductor (MOS) capacitor and transistor devices were studied using the thermally stimulated current (TSC) method. TSC spectra from p-type MOS capacitors and n-channel MOS fieldeffect transistors (MOSFETs) indicated the presence of oxide traps with peak emission around 55 K. An additional peak near 80 K was observed due to acceptor activation and hole traps near the interface. The physical location of the traps in the devices was deduced using a localized electric field approach. The density of hole traps contributing to the 80-K peak was separated from the acceptor trap density using a gamma-ray irradiation method. As a result, hole trap density of N t,hole = 2.08 9 10 15 cm À3 at 2 MV/cm gate field and N t,hole = 2.5 9 10 16 cm À3 at 4.5 MV/cm gate field was extracted from the 80-K TSC spectra. Measurements of the source-body n + -p junction suggested the presence of implantation damage in the space-charge region, as well as defect states near the n + SiC substrate.

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Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

Cited by 21 publications

References 14 publications

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Effects of interface state density on 4H-SiC n-channel field-effect mobility

ESR Microscopy and Nanoscopy with “Induction” Detection

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

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