Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

Abstract

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Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

“…[21] reducing the density of defects at the interface. It is worth to mention that this proposed reaction is consistent with prior experiments on high-k oxides on Ge substrates [10], [23], and that the existence of GeO x in HF cleaned substrates prior FGA, has been widely documented in the literature [30], [49], [50].…”

“…Re-oxidation was done during the ALD of ≈ 2 nm Al 2 O 3 by means of the trimethylaluminum (TMA)/O 3 process. GeO x (Germanium in oxidation states lower than +4) formation during this ALD process has been described before [30], [31], combined with HfCl 4 and H 2 O for HfAlO x and HfGdO x deposition, respectively. The notation HfMO x will be used from now on to refer to these Hf-based high-k dielectrics.…”

Hf-based high-k dielectrics for p-Ge MOS gate stacks

“…GeO x formation during this ALD process has been described before. 19,20 On top of the Al 2 O 3 /GeO 2 stack, $4 nm of an Hf-based high-k was deposited. These high-k layers consisted of HfO 2 , HfAlO x , HfGdO x , or HfZrO y and were all deposited by ALD.…”

Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process

“…In this study, for the purpose of examining the influence of the post-PO process on the slow trap generation, our group compares these properties of slow traps in the Al 2 O 3 /GeO x /Ge MOS structures, which are prepared by Al 2 O 3 ALD − on preplasma oxidation (pre-PO) GeO x /Ge with those of the post-PO Al 2 O 3 /GeO x /Ge ones reported previously . The parameters of the structural process of these MOS interfaces with GeO x formed by pre-PO are systematically varied .…”