Al Ga1−N for solar-blind UV detectors

Sandvik, Peter; Mi, Kan; Shahedipour, F.; McClintock, Ryan P; Yasan, A.; Kung, Patrick; Razeghi, Manijeh

doi:10.1016/s0022-0248(01)01467-1

Cited by 104 publications

(47 citation statements)

References 8 publications

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“…6 Fig . 5 illustrates the plot of the responsivity versus dark current for the state-of-the-art solar blind (230-290 nm) UV detectors reported [4][5][6]8,[10][11]16,[30][31][32][33][34][35][36][37] for the devices based on Al x Ga 1-x N as well as on β-Ga 2 O 3 . The detectors reported in this work have excellent responsivity while maintaining a very low dark current for 230-240 nm range.…”

mentioning

confidence: 99%

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Pratiyush

Krishnamoorthy

Solanke

et al. 2017

Applied Physics Letters

200

122

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confidence: 99%

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Pratiyush

Krishnamoorthy

Solanke

et al. 2017

Applied Physics Letters

200

122

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“…The natural ambient light in this range is very low, therefore the noise level at the receiver is very low. 2 The deep-UV portion of the spectrum is also ideal for fluorescence of chemical compounds in bacteria. This fluorescence spectrum can then be used to identify the bacteria, and warn of the presence of dangerous bacteria.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Dion

Fareed

Zhang

et al. 2011

Journal of Elec Materi

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Off-axis reciprocal-space mapping was performed on aluminum gallium nitride deep-ultraviolet light-emitting diode base layers. The results indicate that aluminum gallium nitride films growing on aluminum nitride-on-sapphire templates initially grow in compression, nearly lattice matched to the relaxed aluminum nitride buffer layer with approximately 0.5% biaxial strain. This compressive strain may be partially relieved over the course of the thick aluminum gallium nitride growth when a high-quality aluminum nitride and superlattice layer is used. Additionally, a growth interruption appears to allow growth of an unstrained aluminum gallium nitride layer without a gradual release of compressive strain. Growth on a bulk aluminum nitride substrate appears to yield an aluminum gallium nitride layer in tension rather than compression.

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“…In the past decade, there have been several reports on GaN-AlGaN based photodetectors, such as photoconductors [2], p-n junction [3], p-i-n [4] and p-p-n [5], Schottky barrier [6][7][8], metal-semiconductor-metal [9], metal-insulator-semiconductor [10], field-effect transistors, bipolar junction transistor [11] and avalanche photodiode [12]. Peak responsivities and corresponding quantum efficiencies scatter in a wide range depending on the device design and material qualities.…”

Section: Introductionmentioning

confidence: 99%

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Teke

Doğan

Yun

et al. 2003

Solid-State Electronics

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We report on characterization and operation principle of a set of GaN/AlGaN multiple-quantum-well (MQW) photovoltaic detectors. The structures were grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates and fabricated in the back-illuminated vertical Schottky geometry. Introduction of MQWs into the active region of devices is expected to enhance the quantum efficiency due to the high absorption coefficient. A nearly flat spectral responsivity between 325 and 350 nm with 0.054 A/W peak responsivity was achieved from the single-side polished backside (rough) illuminated GaN/AlGaN MQW devices. The cutoff wavelength of the MQW photodetector can be tuned by adjusting the well width, well composition and barrier height. A model has been developed to gain insight into the operation principles of MQWs photodiodes. The peak responsivity increased with decreasing barrier thickness due to enhanced tunneling of photogenerated carriers.

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Al Ga1−N for solar-blind UV detectors

Cited by 104 publications

References 8 publications

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

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