Structural Characterization of Highly Conducting AlGaN (x &gt; 50%) for Deep-Ultraviolet Light-Emitting Diode

Dion, Joseph; Fareed, Q.; Zhang, Bin; Khan, Asif

doi:10.1007/s11664-010-1493-9

Cited by 17 publications

(9 citation statements)

References 10 publications

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“…where C 13 and C 33 are the elastic stiffness constants, a 0 and c 0 are the room-temperature lattice constants of freestanding crystals, and a and c are the measured lattice constants. Here, a 0 and c 0 of AlInN are determined according to Vegard's law 28,29) using the following lattice constants: 30) Although the measured RMS values were not as small as on atomically flat surfaces, they were construed to be rather good results considering the influence of the pits on the RMS estimate. To understand the origin of the pits, cross-sectional TEM observation was performed.…”

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confidence: 99%

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched toc-plane GaN grown on sapphire

Miyoshi

Yamanaka

Egawa

et al. 2018

Appl. Phys. Express

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AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

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confidence: 99%

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched toc-plane GaN grown on sapphire

Miyoshi

Yamanaka

Egawa

et al. 2018

Appl. Phys. Express

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“…That is, the alloy compositions for the semipolar AlInN layers were derived by applying the measured lattice constants to an equation ( c − c 0 )/ c 0 = −2 ( C 13 / C 33 ) ( a − a 0 )/ a 0 . [ 31 ] In this equation, a 0 and c 0 are the room‐temperature intrinsic lattice constants, and those of ternary AlInN alloys were calculated according to Vegard's law [ 32,33 ] using the room‐temperature intrinsic lattice constants of binary AlN and InN alloys. [ 34 ] C 13 and C 33 are the elastic stiffness constants, and those were also derived by assuming a linear interpolation between reported values for the binary alloys.…”

Section: Resultsmentioning

confidence: 99%

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template

Miyoshi

Fujisawa

Nakabayashi

et al. 2023

Physica Status Solidi (b)

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Semipolar {} AlInN layers with thicknesses of ≈0.4 μm are grown on a fully relaxed semipolar Ga0.9In0.1N/GaN/m‐plane sapphire template by metalorganic chemical vapor deposition. The grown AlInN layers are confirmed to have relatively flat surfaces of less than 1.5 nm in root mean square roughness and high InN mole fractions ranging from 0.306 to 0.444, which are close to alloy compositions lattice matched to the underlying semipolar {} Ga0.9In0.1N layer. The microstructure analyses reveal that the AlInN layers are mostly relaxed for the underlying GaInN layer and have large fluctuations in lattice strains or lattice spacings, which might have caused many dislocations with different types from the basal‐plane stacking faults existing in the underlying GaN and GaInN layers. When compared to the growth of c‐plane AlInN layers, it is found that the InN incorporation rate into the AlInN alloys is enhanced using the semipolar {} GaInN template. Most noteworthy is that the relatively flat surfaces are realized for the semipolar AlInN layers despite their high InN mole fractions greater than 30%, submicrometer thickness, and many dislocations.

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“…To explore the strain modulation of MQWs grown on NP-DBRs, the XRD asymmetric (105) RSM were measured in regions without (Wo-D) and with NP-DBRs (Wi-D), and the results are shown in Figure a,b, respectively. In the (105) reflection, the lattice constants a and c of epilayers can be derived from the coordinate of the peak position ( Q x , Q y ) as follows where a AlN in both regions are larger than a AlN 0 of unstressed AlN, indicating the tensile status of AlN buffers. In addition, a AlN in the etched region is larger than that in the unetched region due to the strain-induced lattice expansion of the NP-DBRs, and more tensile stress is thus created under the AlN layer, which agrees well with the Raman results.…”

Section: Results and Discussionmentioning

confidence: 99%

Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Shan

Guo

Zhao

et al. 2022

ACS Appl. Nano Mater.

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In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) were grown on the strain-relaxed NP-DBRs template. The reciprocal space mappings (RSMs) revealed the increased compressive strain in MQWs grown on NP-DBRs, and transverse electric (TE) mode emission was enhanced due to this strain modulation. Thanks to the reflection effect, the photoluminescence (PL) intensity of the MQWs in the NP-DBR region was more than twice that of the region without NP-DBRs. The anisotropic optical polarization measurements and theoretical simulations demonstrated that the light extraction of both TE and transverse magnetic (TM) modes were improved by reflection, and the sideward light can be deflected upward by scattering by the etched nanovoids. Especially, the TM mode light was more extracted by NP-DBRs. Our work highlighted the possible applications enabled by the DUV NP-DBRs in light reflection and structural reconstructions of AlGaNbased UV emitters.

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Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Cited by 17 publications

References 10 publications

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched toc-plane GaN grown on sapphire

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched toc-plane GaN grown on sapphire

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template

Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

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