GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Teke, Ali; Doğan, S.; Yun, Feng; Reshchikov, M. A.; Le, HM; Liu, X.Q; Morkoç̌, H.; Zhang, S.K; Wang, W.B; Alfano, R. R.

doi:10.1016/s0038-1101(03)00068-6

Cited by 25 publications

(15 citation statements)

References 29 publications

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“…Reported photoresponse studies using AlGaN/GaN QWs structures are very limited [76,77]. For UV detection edges significantly shorter than 360 nm, present research efforts to develop short wavelength AlInGaN MQW UV sources will clearly benefit to explore such structures for photodetection applications.…”

Section: Featurementioning

confidence: 99%

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(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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www.pss-b.com filters are needed to stop low energy photons (VIS and infrared light), degradation is produced by UV photons (shorter device lifetime), efficiency lowers, dark current increases markedly with temperature, etc. The development of higher band gap III-arsenides or III-phosphides for UV photodetection did not progress substantially. On the other hand, for high sensitivity UV applications, PMT are needed, being bulky and requering a high-voltage power supply [1][2][3].To avoid the use of filters, to increase efficiency, to lower noise and dark current specially above room temperature, and to achieve visible-blind operation, UV detectors based on wide band gap semiconductors have been studied during the last decade. Thin film synthetic diamond detectors (E g = 5.4 eV, 227 nm, direct gap), were developed and commercialised mainly as polycrystalline photoconductor devices. SiC p-n junction PD (4H-SiC, E g = 3.26 eV; 6H-SiC, E g = 3 eV, indirect gap), have been also available. However, the turning point to make visible-blind UV detectors an appealing reality, to open really new possibilities for UV detection, has been the development of (Al,In,Ga)N semiconductors. The possibility of selecting the cut-off wavelength by adjusting the mole fraction of the ternary or quaternary alloys is unique, so far not being proven by any other wide-band-gap semiconductor family [2].III-nitrides are direct band gap materials, with GaN showing its absorption edge at 360 nm (E g = 3.44 eV) and at 200 nm for AlN (E g = 6.2 eV), and with the ability to form heterojunctions and to withstand high temperatures. Even the 400 nm UV frontier can be reached using (In,Ga)N alloys (band gap assigned today to InN is 0.7 eV). This tunability of the detection edge by just varying the Al(In) mole fraction, and the fact that (Al,In,Ga)N technology is already fully commercial for light emitting diodes, laser diodes (LEDs and LDs, respectively) [4], and it has just started for high electron mobility transistors (HEMTs), are very important points that have made (Al,In,Ga)N alloys the most adequate solution for UV detection in many applications. Besides, the high chemical and thermal stability of GaN, GaN-based detectors are also of interest for high photon energy detection (e.g. VUV and X-rays) and even for high energy particle detection [5].The photoconductive properties of GaN were studied by Pankove and Berkeyheiser in 1974 [6], and in about fifteen years of III-nitrides technology, the first GaN UV photoconductive detectors were reported by Khan in 1992 [7]. Since then, practically all types of PD structures have been developed, directly linked to advances in GaN and AlGaN epitaxial growth, and to progresses in p-type doping and in ohmic and Schottky contact technology. Trying to give a perspective of the developments, we may consider an initial exploratory phase (a proof of concept, first generation of UV detectors, VIS blind), just trying to confirm that GaN and AlGaN PDs (with low-medium Al mole fractions) were feasible. Later, a second ...

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Section: Featurementioning

confidence: 99%

“…These properties have been used to fabricate SB as well as MIS polarization-sensitive UV photodetectors [10]. GaN layers were grown on LiAlO 2 (100) by rf-plasma assisted MBE at the Paul Drude Institute [9,77].…”

Section: Polarization Sensitive Photodetectorsmentioning

confidence: 99%

(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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“…3 just the radiative recombination rate is shown. (Temperature varies from 250 to 450 K) Some of the required material constants used in our calculations are borrowed from Teke et al (2003) and given in Table 1, where, x is the molarity of Al which is considered 0.2 in our work. …”

Section: Resultsmentioning

confidence: 99%

The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes

2009

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Nitride semiconductors and their alloys recently have versatile applications as high-power and high-efficiency electro optical devices duo to their high thermal stability, direct transition and wide bang-gap. Nanostructure light emitting diodes of these materials have an emission spectrum from infrared to ultraviolet. In this paper, besides simulating a nanostructure nitride semiconductor LED, such as multi quantum well nitride LEDs, the effect of temperature on the recombination rate has been investigated.

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“…The strong electric field can be used to attract electrons which leads to formation of 2-dimensional (2D) electron gas and can be used for polarization doping [3]. Photodetectors that make profit of this effect have been shown [4,5], including GaN/AlGaN detectors with spectral response tunable by external voltage [6,7].…”

Section: Introductionmentioning

confidence: 99%

InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas

et al. 2008

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We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.

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GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Cited by 25 publications

References 29 publications

(Al,In,Ga)N‐based photodetectors. Some materials issues

(Al,In,Ga)N‐based photodetectors. Some materials issues

The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes

InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas

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