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“…The vertical device can be modeled with metal–semiconductor diode connected back to back with a series resistance in between the two contacts. I – V characteristic of a metal–semiconductor–metal (MSM) in both forward and reverse bias conditions can be expressed by the following equation…”
Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W−1 and a detectivity of >1013 cm Hz0.5 W−1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In2Se3 junction resulted in a photovoltaic effect with VOC ≈0.1 V and ISC ≈0.4 μA under an illumination of 520 nm.
“…The vertical device can be modeled with metal–semiconductor diode connected back to back with a series resistance in between the two contacts. I – V characteristic of a metal–semiconductor–metal (MSM) in both forward and reverse bias conditions can be expressed by the following equation…”
Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W−1 and a detectivity of >1013 cm Hz0.5 W−1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In2Se3 junction resulted in a photovoltaic effect with VOC ≈0.1 V and ISC ≈0.4 μA under an illumination of 520 nm.
“…[1][2][3][4][5][6][7][8][9][10][11] Interest is also rising for possible applications as a deep ultraviolet solar blind detector due to its outstanding transparency out to $260 nm. 10,11 However, perhaps the primary driver for the interest is that b-Ga 2 O 3 , with its $4.5-4.9 eV bandgap, 2 is available as a bulk crystal, and therefore, native substrates are available for lattice-matched epitaxial growth of device structures, unlike contemporary wide and ultrawide bandgap semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11] Interest is also rising for possible applications as a deep ultraviolet solar blind detector due to its outstanding transparency out to $260 nm. 10,11 However, perhaps the primary driver for the interest is that b-Ga 2 O 3 , with its $4.5-4.9 eV bandgap, 2 is available as a bulk crystal, and therefore, native substrates are available for lattice-matched epitaxial growth of device structures, unlike contemporary wide and ultrawide bandgap semiconductors. In spite of the early stage of development, promising device demonstrations have already been reported, including metal-semiconductor field effect transistors (MESFETs), 1 metal-oxide field effect transistors (MOSFETs), [2][3][4][5] Schottky diodes, [6][7][8][9] FinFETs, 12 delta-doped FETs, 13 and (Al 1-x Ga x ) 2 O 3 /Ga 2 O 3 modulation-doped field effect transistors (MODFETs) grown by plasma-assisted molecular beam epitaxy (PAMBE).…”
Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC − 2.00 eV, EC − 3.25 eV, and EC − 4.37 eV with concentrations on the order of 1016 cm−3, and a lower concentration level at EC − 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC − 0.1 – 0.2 eV and EC − 0.98 eV. There was no evidence of the commonly observed trap state at ∼EC − 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively “clean” upper part of the bandgap. However, the states at ∼EC − 0.98 eV, EC − 2.00 eV, and EC − 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.
“…Thus, we speculate that the increased voltage weakens the trapping time of trap states on holes (electrons), which means that the carrier lifetimes are relatively decreased and then the response speed is decreased. As seen from table 2, the response times of CH 3 NH 3 PbX 3 detectors are 10 1 –10 3 times shorter than previously reported SrRuO 3 /BaTiO 3 /ZnO (7.1 s, 2.3 s) [40], β-Ga 2 O 3 (3.33 s, 0.4 s) [45] and NaTaO 3 (50 ms) [46]. Figure 4.Photo-switching characteristics of ( a , d ) CH 3 NH 3 PbCl 3 ( b , e ) CH 3 NH 3 PbBr 3 and ( c , f ) CH 3 NH 3 PbI 3 photodetectors illuminated under modulated 255 nm light.…”
Deep-UV light detection has important application in surveillance and homeland security regions. CH3NH3PbX3 (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH3NH3PbX3 (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–103 times higher than MgZnO and Ga2O3 detectors, and their response speeds are 103 times faster than Ga2O3 and ZnO detectors. These results indicate a new promising route for deep-UV detection.
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