Accurate MOS modelling for analog circuit simulation using the EKV model

Bucher, Matthias; Lallement, Christophe; Enz, Christian; Krummenacher, F.

doi:10.1109/iscas.1996.542121

Cited by 34 publications

(47 citation statements)

References 5 publications

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“…It is not clear, though, whether these restrictions are fundamental to the Verilog-AMS language definition or only a consequence of the Cadence implementation. (1) `include "disciplines.h" (2) `include "constants.h" (3) (4) module cap_sensor (tmass, tmref, tetop, temid, tebot); (5) (6) inout tmass, tmref, tetop, temid, tebot; (7) (8) kinematic tmass, tmref; (9) electrical tetop, temid, tebot; (10) electrical cd_vel, cd_accel; (11) electrical vdiff_tm, vdiff_bm, vdiff_dtm, vdiff_dbm; (12) (13) // mechanical properties (14) parameter real M = 0.16n; // seismic mass (15) parameter real D = 4u; // damping coefficient (16) parameter real K = 2.6455; // spring stiffness (17) // geometrical properties (18) parameter real A = 220f; // capacitor area (19) parameter real D0 = 1.5u; // initial position (20) (21) real cd_pos; (22) real dtm, dbm, ctm, cbm; (23) (24) analog begin (25) // compute displacement of comb drive (26) cd_pos = Pos(tmass); (27) V(cd_vel) <+ ddt(Pos(tmass)); (28) V ( …”

Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

“…`timescale 100ns/1ns (2) `include "disciplines.h" (3) (4) module trigger (din, tp); (5) input din; (6) inout tp; (7) wire din; (8) electrical tp; (9) (10) parameter real VOAMPL = 2.5; // output voltage amplitude (11) parameter ICLKPER = 200; // internal clock period (12) parameter real NPULSES = 10; // #pulses to count (13) parameter real TT = 100n; // output transition time (14) (15) reg intclk; (16) integer count; (17) real sout; (18) (19) initial begin (20) intclk = 0; (21) count = 0; (22) sout = 0; (23) end (24) (25) always #(ICLKPER/2) intclk = !intclk; (26) (27) always @(posedge din or negedge intclk) (28) begin (29) if ( …”

Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

“…The modeled effects include all the essential effects present in sub micron technologies. Several electrical parameters are highly dependent on temperature, namely the threshold voltage, the mobility, the thermal voltage, etc... Their respective temperature variations are taken into account by appropriate coefficients in the model equations [19]. The VHDL-AMS source code for the CMOS inverter is given in Fig.…”

Section: The Cmos Inverter Submodelmentioning

confidence: 99%

“…Note that all terminal potentials are defined relatively to the bulk terminal, a specificity of the EKV MOST model. (12) ); (13) port ( (14) terminal tin, tout, tvdd, tvss: electrical; (15) terminal tjn, tjp : thermal (16) ); (17) end entity cmos_inv; (18) (19) architecture str of cmos_inv is (6) entity mos is (7) generic ( --temperature coefficients (20) TCV : real := 1.5*MILLI; --temp. coef, of thres.…”

Section: ) Vhdl-ams Descriptionmentioning

confidence: 99%

“…`include "mos_ekv_simple.v" (4) (5) module cmos_inv (tin, tout, tjn, tjp, tvdd, tvss); (6) (7) inout tin, tout, tjn, tjp, tvdd, tvss; (8) electrical tin, tout, tvdd, tvss; (9) thermal tjn, tjp; (10) (11) parameter real WP = 60u; (12) parameter real WN = 30u; (13) parameter real LP = 0.15u; (14) parameter real LN = 0.15u; (15) (16) mos_ekv #(.MTYP(-1.0), (17) .WEFF(WP), (18) .LEFF(LP), (19) .VT0(-0.4), (20) .TCV(-1.5m)) (21) mp (.td(tout), (22) .tg(tin), (23) .ts(tvdd), (24) .tb(tvdd), (25) .tj(tjp)); (26) (27) mos_ekv #(.MTYP(1.0), (28) .WEFF(WN), (29) .…”

Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

See 4 more Smart Citations

VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems

Pêcheux

Lallement²,

Vachoux

2005

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Self Cite

171

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Abstract-This paper focuses on commonalities and differences between the two mixed-signal hardware description languages VHDL-AMS and Verilog-AMS in the case of modeling heterogeneous or multi-discipline systems. The paper has two objectives. The first one consists of modeling the structure and the behavior of an airbag system using both the VHDL-AMS and the Verilog-AMS languages. Such a system encompasses several time abstractions (i.e. discrete-time and continuous-time), several disciplines, or energy domains (i.e., electrical, thermal, optical, mechanical, and chemical), and several continuous-time description formalisms (i.e., conservative-law and signal-flow descriptions). The second objective is to discuss the results of the proposed modeling process in terms of the descriptive capabilities of the VHDL-AMS and Verilog-AMS languages and of the generated simulation results. The tools used are Advance-MS from Mentor Graphics for VHDL-AMS and AMS Simulator from Cadence Design Systems for Verilog-AMS. The paper shows that both languages offer effective means to describe and simulate multi-discipline systems, although using different descriptive approaches. It also highlights current tool limitations since full language definitions are not yet supported.

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Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

Section: The Cmos Inverter Submodelmentioning

confidence: 99%

Section: ) Vhdl-ams Descriptionmentioning

confidence: 99%

Section: ) Verilog-ams Descriptionmentioning

confidence: 99%

See 3 more Smart Citations

VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems

Pêcheux

Lallement²,

Vachoux

2005

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Self Cite

171

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Current‐mode programmable piecewise‐linear neural synapses

Balsi

Giuliani

2003

Circuit Theory & Apps

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Analysis of the floating‐gate transistor using the charge sheet model

Medina-Vazquez

Meda-Campana

Gurrola-Navarro

et al. 2015

Int J Numerical Modelling

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The multiple-input floating-gate transistor is a semiconductor device that has found wide application in digital and analog electronic integrated circuits. Simulating an electronic circuit is an essential step in the design flow, prior to manufacturing. Therefore, an advanced model for the multiple-input floating-gate transistor is needed for analog design. This paper shows a method for adapting the charge sheet model for advanced models of the device. In addition, the problem of obtaining the drain to source current numerically as a function of external voltages is addressed. Furthermore, important plots are presented in order to clarify the behavior of the concerned device. The small signal analysis of the device is included. This summary may be interesting to those seeking to model the multiple-input floating-gate transistor, looking for alternatives to analog electronic design, needing low operating voltage, generating new design strategies, or wishing to understand of the operation of the device or the use of alternatives to implement analog circuits. Figure 2. (a) Intrinsic interface for n-input gates MIFGMOS and (b) MOS interface with a new terminal added (c) capacitances are represented only. 678 A. S. MEDINA-VAZQUEZ ET AL.Figure 3. ψ s vs. (V 1 À V FB ).Simulation results for the intrinsic interface. Voltage V 1 is applied to the control gate CG 1 and swept while V 2 voltage (applied to the control gate CG 2 ) is used as a parameter. V FB = 0.6 V, t ox = 8e À 9 m, W = 0.3 μm, W = 0.1 μm, C 1 = 50 fF, C 2 = 20 fF.

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Accurate MOS modelling for analog circuit simulation using the EKV model

Cited by 34 publications

References 5 publications

VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems

VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems

Current‐mode programmable piecewise‐linear neural synapses

Analysis of the floating‐gate transistor using the charge sheet model

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