A review of DASIE code family: contribution to SEU/MBU understanding

Hubert, G.; Buard, N.; Weulersse, C.; Carrière, T.; Palau, M.-C.; Palau, J.M.; Lambert, Damien; Baggio, J.; Wrobel, Frédéric; Saigné, Frédéric; Gaillard, R.

doi:10.1109/iolts.2005.12

Cited by 30 publications

(8 citation statements)

References 31 publications

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“…The multi-scales modeling and physics-based MonteCarlo simulations have been widely developed [5,[10][11][12][13][14][15][16][17] and allows for investigating SEE trends.…”

Section: Musca Sep 3 Methodologymentioning

confidence: 99%

“…The diffusion coefficients r lat and r depth are characteristics of the diffusion mechanisms and certain technological parameters [11,12]. Finally, the collection efficiency factor can also be calculated by the ratio between the collected carrier level participating to the flipping process and the initial deposited carrier.…”

Section: B Carriers Transport and Charge Collectionmentioning

confidence: 99%

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MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

Hubert

Duzellier

Bezerra

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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“…The multi-scales modeling and physics-based MonteCarlo simulations have been widely developed [5,[10][11][12][13][14][15][16][17] and allows for investigating SEE trends.…”

Section: Musca Sep 3 Methodologymentioning

confidence: 99%

Section: B Carriers Transport and Charge Collectionmentioning

confidence: 99%

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

Hubert

Duzellier

Bezerra

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

Self Cite

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“…On the other hand, the charge collection mechanism is dominated by diffusion current in the events in which the ion track does not intersect the drain [2]. Theoretical studies showed that, typically, 80%-90% of the neutron induced SER is represented by the latter events in which the current pulse is relatively wide [41], [42]. Such a discussion demonstrates that both narrow and wide current pulses must be considered in calculations.…”

Section: B Verification Of the Models Estimated Critical Chargementioning

confidence: 98%

A Design-Oriented Soft Error Rate Variation Model Accounting for Both Die-to-Die and Within-Die Variations in Submicrometer CMOS SRAM Cells

Mostafa

Anis

Elmasry

2010

IEEE Trans. Circuits Syst. I

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Submicrometer static random access memory cells are more susceptible to particle strike soft errors and increased statistical process variations, in advanced nanometer CMOS technologies. In this paper, analytical models for the critical charge variations accounting for both die-to-die and within-die variations are proposed. The derived models are verified and compared to Monte Carlo simulations by using industrial 65-nm CMOS technology. This paper provides new design insights such as the impact of the coupling capacitor, one of the most common soft error mitigation techniques, on the critical charge variability, especially, at lower supply voltages. It demonstrates that two extreme values of this coupling capacitor exist. The first value results in maximum relative variations and the other results in minimum relative variations. Therefore, the circuit designers can utilize these results to design the coupling capacitor to limit the variations under power and performance constraints in early design cycles. The derived analytical models account for the impact of the supply voltage and different particle strike conditions. These results are particularly important for soft error tolerant and variation tolerant designs in submicrometer technologies, especially, for low power operations.Index Terms-Deep submicrometer, process variations, reliability, soft errors, static random access memory (SRAM).

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“…Theoretical studies have shown that typically 80%-90% of neutron-induced upsets are caused by nondrain-intersecting events [23]. However, others have reported that the average current pulse due to a neutron hit has a time scale of approximately 10 ps, both for electron and for hole collection [22].…”

Section: A Modeling Of Experimental Ser Datamentioning

confidence: 99%

A Comparative Study on the Soft-Error Rate of Flip-Flops from 90-nm Production Libraries

Heijmen

Roché

Gasiot

et al. 2006

2006 IEEE International Reliability Physics Symposium Proceedings

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Abstract-This paper presents a study using alpha-and neutron-accelerated tests to characterize the soft error rate (SER) of flip-flops (FFs) that are used in 90-nm CMOS production designs. The investigated FFs differ in circuit schematic, threshold voltage (V T ), drive strength, and cell height. Both the alpha-and the neutron-induced SER of FFs on a dedicated 90-nm test chip showed a strong dependence on clock and data state. Theoretical results demonstrate that the FF SER is modeled best if particle hits at both the NMOS and the PMOS drains are included and if the resulting current pulse is assumed to have a width of approximately 5 ps. Furthermore, the impact of process variations on the FF SER is shown to depend strongly on the data state and on the applied pulsewidth. On average, the SER per bit of the investigated FFs is higher than the typical SER per bit of unprotected static random access memories in 90 nm and has increased with a factor of 3 per technology generation. The reported results illustrate the importance of the characterization of FF SER in order to design reliable integrated circuits.

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A review of DASIE code family: contribution to SEU/MBU understanding

Cited by 30 publications

References 31 publications

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

A Design-Oriented Soft Error Rate Variation Model Accounting for Both Die-to-Die and Within-Die Variations in Submicrometer CMOS SRAM Cells

A Comparative Study on the Soft-Error Rate of Flip-Flops from 90-nm Production Libraries

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