Life cycle assessment within a techno-economic framework is carried out for triboelectric nanogenerators in the context of other technologies.

A modified CMOS realization of the operational transresistance amplifier (OTRA) is presented. A fair comparison with Salama and Soliman OTRA [1] shows that the modified OTRA provides better performance in all parameters. The OTRA is suitable for analog VLSI applications since it does not suffer from constant gain bandwidth product. Hence, it can exhibit wide bandwidth at high gain values. Moreover, an OTRA based variable gain amplifier (VGA) is introduced. A detailed analysis taking the effect of the finite transresistance gain in consideration is provided.Index Terms -CMOS operational transresistance amplifier, analog VLSI applications, variable gain amplifier, wireless communications,

Reliability and variability have become big design challenges facing submicrometer SRAM designers. A low area overhead adaptive body bias (ABB) circuit is proposed in this paper to compensate for NBTI aging and process variations to improve the SRAM reliability and yield. The proposed ABB circuit consists of a threshold voltage sensing circuit and an on-chip analog controller. Postlayout simulation results, referring to an industrial hardware-calibrated STMicroelectronics 65 nm CMOS technology transistor model, are presented. The transistor model contains process variations and NBTI aging model cards, which are declared by STMicroelectronics to be silicon verified. Cadence RelXpert, Virtuoso Spectre, and Virtuoso UltraSim tools are used to estimate the NBTI aging and process variations impacts on the SRAM array. These results show that the proposed ABB compensates effectively for NBTI aging and process variations. For example, the proposed ABB reduces the read failure probability from 0.32% to 0.05% and the SNM degradation from 10.9% to 2.6% at 10 years aging time. In addition, the proposed ABB enhances the soft errors immunity of the SRAM cell by reducing the critical charge degradation from 12.7% to 3.4% at 10 years aging time.Index Terms-Adaptive body bias, deep submicrometer, negative bias temperature instability, process variations, soft errors, SRAM cells.

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