A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

“…The pumped region represents the spatial and energetic portion of the oxide where traps are exchanging carriers with the substrate during a single CP pulse. This quantity has been calculated using an analytical approach similar to the one adopted in [6], [15], and [22] from the maximum electron and hole occupations using…”

“…Fig. 8 illustrates the simulated f CP for three frequencies (1 kHz, 10 kHz, and 1 MHz) at T = 300 K and V sw = 2.5 V. The maximum probed regions achievable are illustrated at V low cor- [5], [15], [16], [23]. responding to the maximum CP current.…”

A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs

“…V th = 10 V is extracted as the intercept of linear extrapolation of the transfer curve. According to the MOSFET CP model [1]- [3], I cp should be obtained when V g pulses span the hatched transition region between V fb and V th . For example, if I cp is measured by using V g pulses with fixed amplitude V ph = 22 V and increasing V gb (e.g., pulses I to V in Fig.…”

“…When the entire V g pulse is within the accumulation or strong inversion region, such as pulse I (V gp = V fb ) or V (V gb = V th ), no I cp arises. Thus, an ideal Elliot curve is cap shaped, where V fb and V th are critical onset V g 's of the constant I cp [1]- [3]. The dotted line is a measured Elliot curve from the LT TFT by using optimized V g pulses with V ph = 22 V and a large enough t r /t f of 1 ms to minimize the geometric effect [10].…”

“…C HARGE pumping (CP) is a standard technique to evaluate the interface trap state density (D t ) in MOSFETs [1]- [3]. When CP currents (I cp ) are measured against the step increased gate pulse base voltage (V gb ) with a fixed pulse height (V ph ), an Elliot curve is obtained [1].…”