A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs

Lü, Lei; Wang, Mingxiang; Wong, Man

doi:10.1109/led.2010.2104311

Cited by 7 publications

(3 citation statements)

References 15 publications

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“…As a result, it is natural that ΔN st (CPT) is lower than ΔN st (MGT) because the edges of the band gaps cannot be reached by CPT. 6.0x10 9 9.0x10 9…”

Section: Figure 4: the Areal Density Changes Of Fixed Traps (δN Ft ) mentioning

confidence: 99%

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18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri

Morkoç¹,

Kahraman²,

Yeğen³

et al. 2019

Uludağ University Journal of the Faculty of Engineering

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The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities. The measured threshold voltages were compared before and after irradiation. Trap densities calculated using various techniques in the gate oxide and oxide/silicon interface were interpreted. The ΔV th-D graph showed excellent linearity of up to just about 2 Gy. The RadFETs response to radiation started to deviate from linearity after 2 Gy due to increasing oxide trapped charges induced by electric field screening. The experimental outcomes are in good accordance with the fitting function given for RadFETs. Fixed and switching traps formed by irradiation were investigated. The density of the fixed traps was significantly higher than the density of the switching traps. From the threshold voltages measured under zero gate voltage in a certain time interval, the percentage fading range was calculated as 0.004-1.235%.

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“…As a result, it is natural that ΔN st (CPT) is lower than ΔN st (MGT) because the edges of the band gaps cannot be reached by CPT. 6.0x10 9 9.0x10 9…”

Section: Figure 4: the Areal Density Changes Of Fixed Traps (δN Ft ) mentioning

confidence: 99%

“…In this way, contributions can be determined for two types of traps. Sub-threshold I-V curves and the parallel shift of Elliot curves from the CPT are caused by the FTs (Lu et al, 2011). The STs provide stretch-out of sub-threshold curves in MGT and increase of charge pumping current (I CP ) in CPT.…”

Section: Figurementioning

confidence: 99%

18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri

Morkoç¹,

Kahraman²,

Yeğen³

et al. 2019

Uludağ University Journal of the Faculty of Engineering

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“…Traditionally,D t is extracted from the frequency dependence of I cp using square pulses, based on the following equation [12]:…”

Section: Extraction Of Trap State Densitymentioning

confidence: 99%

Separation of the Geometric Current in Charge Pumping Measurement of Polycrystalline Si Thin-Film Transistors

Wang

2014

IEEE Trans. Electron Devices

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In the charge pumping (CP) measurement of polycrystalline Si (poly-Si) thin-film transistors (TFTs), an experimental approach is developed to evaluate and separate the geometric current (I geo ) from the measured CP current based on a group of TFTs with different channel widths and fixed channel length. Along with the separation of I geo , a new method is proposed to reliably characterize the trap state density of TFTs. Without the I geo , the overestimation in CP measurement is avoided even for short CP pulse transition times. Moreover, critical transition time for the occurrence of geometry effect is determined, which agrees well with the prediction from a physical model of diffusion controlled carrier evacuation.Index Terms-Charge pumping (CP), geometric current (I geo ), polycrystalline Si (poly-Si), thin-film transistors (TFTs), trap state density (D t ).

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Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

Tang

Toledano-Luque

Zhang

et al. 2013

Microelectronic Engineering

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A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs

Cited by 7 publications

References 15 publications

18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri

18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri

Separation of the Geometric Current in Charge Pumping Measurement of Polycrystalline Si Thin-Film Transistors

Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

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