The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO 2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO 2 films deposited using RF magnetron sputtering system were performed in N 2 ambient at 350, 550, 650, and 750°C. The phase identifications and crystallization degrees of the HfO 2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO 2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/ x-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550°C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/x-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/x-V behaviour of the MOS capacitor.

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In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

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