A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

“…If there exist deep traps at the M/S interface, the charge conduction profile is modified and these modifications affect the slopes of the forward bias I-V characteristics. At low voltages (I. regime), the current-transport mechanism for the sample exhibits an ohmic behavior, that is, the current is directly proportional to applied bias voltage [10,[45][46][47]. This behavior can be attributed to the superior- ity of bulk generated current in the film to the injected free carrier generated current [47][48][49].…”

Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

“…The work frame of TiO 2 consists of metal-semiconductor-metal (MSM) [12,13], heterojunction [14] and Schottky [15] structures. As potential application areas; optoelectronic devices (solar cells [16], gas sensors [17]) metal-insulator-semiconductor (MIS)…”

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

“…The current conduction mechanisms in these devices depend on various parameters. Especially, the series resistance (R s ) of device and organic interfacial layer at M/S interface play an important role in the C-V and G/ω-V characteristics [10][11][12][13][14][15][16][17][18][19][20][21]. R s is one of the important sources of small signal energy loss in MS and MIS structures [6,7,10] and it can stem from five different sources: (1) the contact made by the probe wire to the gate; (2) the back contact of semiconductor; (3) impurities in semiconductor; (4) the resistance * Corresponding author.…”