Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

Vural, Ö.; Şafak, Yasemin; Türüt, A.; Altındal, Ş.

doi:10.1016/j.jallcom.2011.09.101

Cited by 58 publications

(46 citation statements)

References 36 publications

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“…This can be ascribed to the loss of interface states charges at the interface because of the impact ionization process. Similar results on negative capacitance phenomenon have been reported for the Al/rhodamine-101/n-GaAs Schottky barrier diodes by Vural et al [20]. Thus, the interface states charges have mainly importance on the capacitive property of the diode.…”

Section: Resultssupporting

confidence: 86%

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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Abstract:In this study, the photovoltaic device application of bromothymol blue (BTB) as an organic interlayer has been reported. After Al back contact fabrication on the surface of the chemically cleaned substrate by thermal evaporation method, the organic interlayer has been grown on p-Si substrate via spin coating technique. Al top contacts have been formed on this organic thin film to finalize the device constructions. The different illumination intensities were exposed to the prepared sample for the enhancement in the photovoltaic properties of device. The fundamental photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Isc) and output power (P) were determined for the device under different illuminations. The photocurrent and the photo voltage have been increased with the increasing in illumination intensity. The dependence of the capacitance on the voltage at high and low frequency has been also reported for the studied device. Consequently, it has been confirmed that the illumination intensity has an important influence on the photovoltaic parameters of the device. Özet: Bu çalışmada, organik ara yüzey olarak brom timol mavisi (BTB) kullanılarak foto voltaik aygıt uygulaması rapor edilmiştir. Kimyasal olarak temizlenen tabanın mat yüzeyine ısıl buharlaştırma yöntemiyle Al arka kontak oluşturulduktan sonra, dönel kaplama yardımıyla organik ara yüzey tabakası Si taban üzerine kaplanmıştır. Aygıt üretimini tamamlamak için, bu organik ince filmin üzerine Al üst kontaklar oluşturulmuştur. Aygıtın foto voltaik özelliklerini iyileştirmek amacıyla hazırlanan örnek farklı şiddetlerdeki aydınlamaya maruz bırakılmıştır. Farklı aydınlanmalar altında aygıtın açık devre voltajı (Voc), kısa devre akımı (Isc) ve çıkış gücü (P) gibi temel güneş pili parametreleri belirlenmiştir. Aydınlanma şiddetinin artması ile fotoakım ve fotogerilim değerleri artmıştır. Ayrıca, yüksek ve düşük frekans değerlerinde aygıt sığasının voltaj bağımlılığı rapor edilmiştir. Aydınlanma şiddetinin üretilen aygıtın fotovoltaik parametreleri üzerinde önemli bir etkisinin olduğu sonucuna varılmıştır. Spin Kaplama Yöntemiyle Hazırlanan Organik Arayüzeyi

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Section: Resultssupporting

confidence: 86%

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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“…In general, polarization mechanisms at low frequencies are affected by electronic, ionic, dipolar and interface or surface polarization distribution [24,25]. The high values of ε and ε investigated at low frequencies may be attributed to interfacial Maxwell-Wagner polarization [26] and space charge polarization [27].…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 95%

“…There are many studies on the complex electric modulus M * formalism with regard to the analysis of dielectric or insulator materials [27,28]. The complex impedance Z * or the complex permittivity ε * = 1/M * data are transformed into the M * formalism using the following relation [11,[26][27][28].…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 99%

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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An (Au/Ti)/Al2O3/n-GaAs structure with thin (30 Å) interfacial oxide layer (Al2O3), formed by atomic layer deposition technique is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε and ε ) and electric modulus (M and M ), loss tangent tan δ and ac electrical conductivity σAC in a wide frequency range from 1000 Hz to 1 MHz at room temperature. The dielectric properties of the (Au/Ti)/Al2O3/n-GaAs metal-insulator-semiconductor structure are obtained using the forward and reverse bias capacitance-voltage (C-V ) and conductance-voltage (G/ω-V ) measurements in the applied bias voltage range from -4 V to +4 V, at room temperature. Experimental results show that the dielectric parameters were strongly frequency and voltage dependent. For each frequency the (C-V ) plots show a peak and the change in frequency has effect on both the intensity and position of the peak. ε , ε and tan δ decrease with increasing frequency, whereas σAC increases with increasing frequency at applied bias voltage. M increases with the increasing frequency and reaches a maximum. M shows a peak and peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the ε , ε , tan δ, M , M and σAC values of the (Au/Ti)/Al2O3/ n-GaAs structure are strongly dependent on both the frequency and applied bias voltage especially in the depletion and accumulation region. Also, the results can be deduced to imply that the interfacial polarization is easier at low frequencies, therefore contributing to the deviation of dielectric properties and AC electrical conductivity of (Au/Ti)/Al2O3/n-GaAs structure.

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“…The electronic parameters of MIS contacts depend on the properties of insulator layer, the interface properties between metal and semiconductor, series resistance and inhomogeneities of Schottky barrier heights [1][2][3][4]. Particularly, gallium-arsenide-based structures have been used as the basic component for high speed electronic, optoelectronic, and lasers because of their technical importance [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

et al. 2015

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The frequency-dependent electrical characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/ n-GaAs Schottky barrier diodes have been investigated by using capacitance-voltage (C-V ) and conductancevoltage (G/ω-V ) measurements at room temperature. Negative capacitance behavior has been observed in the C-V characteristic for each frequency. The magnitude of absolute value of C was found to increase with decreasing frequency in the forward bias region. The value of G/ω increases with decreasing frequency in the positive region. This can be attributed to the increase in the polarization at low frequencies and to the fact that more carriers are introduced into the structures. Negative capacitance phenomenon can be explained by the loss of interface charges from the occupied states below the Fermi level, caused by impact ionization process. According to obtained result, the values of C and G/ω are strong functions of frequency and applied bias voltage, particularly in the accumulation an inversion region. Doping concentration (N d ), diffusion potential (V d ), Fermi energy level (E f ), and barrier height (Φ b (C-V )) values have been calculated from reverse bias C −2 -V plots for 3 MHz. Finally, the obtained value of Rs in the accumulation region increases with decreasing frequency.

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Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

Cited by 58 publications

References 36 publications

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

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Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

Cited by 58 publications

References 36 publications

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature