It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential ([Formula: see text], donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first [Formula: see text], then reduced to second [Formula: see text] under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.
This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, V bi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the V bi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.
Bromothymol blue (BTB) with the molecular formula of C 27 H 28 Br 2 O 5 S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance-voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.
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