Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices

Wagle, Shaila; Shirodkar, V. S.

doi:10.1590/s0103-97332000000200019

Cited by 12 publications

(7 citation statements)

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“…If there exist deep traps at the M/S interface, the charge conduction profile is modified and these modifications affect the slopes of the forward bias I-V characteristics. At low voltages (I. regime), the current-transport mechanism for the sample exhibits an ohmic behavior, that is, the current is directly proportional to applied bias voltage [10,[45][46][47]. This behavior can be attributed to the superior- ity of bulk generated current in the film to the injected free carrier generated current [47][48][49].…”

Section: T (K)mentioning

confidence: 99%

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Uslu

Altındal

Polat

et al. 2011

Journal of Alloys and Compounds

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Section: T (K)mentioning

confidence: 99%

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Uslu

Altındal

Polat

et al. 2011

Journal of Alloys and Compounds

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“…In the high-bias region, the structure approaches the trap-filled limit; consequently, the slope tends to decrease. The intense electron injection causes electrons to escape from the traps, thereby contributing to the generation of space-charge-limited current (SCLC). − …”

Section: Resultsmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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“…Here, m represents the slope of the each regions' linear section and was found as 1.60, 4.35 and 1.73 for Au/n-Si structure with anatase phase TiO 2 and 1.89, 11.70 and 2.02 for Au/n-Si structure with rutile phase TiO 2 , respectively. At low bias region (region 1), the current conduction mechanism for both of the samples exhibits an ohmic behavior, that is, the current is directly proportional to applied bias voltage [45]. This behavior can be attributed to the superiority of bulkgenerated current in the film to the injected free carrier generated current [45][46][47].…”

Section: Resultsmentioning

confidence: 99%

“…At low bias region (region 1), the current conduction mechanism for both of the samples exhibits an ohmic behavior, that is, the current is directly proportional to applied bias voltage [45]. This behavior can be attributed to the superiority of bulkgenerated current in the film to the injected free carrier generated current [45][46][47]. The second region for the both samples can be characterized by power law dependence.…”

Section: Resultsmentioning

confidence: 99%

“…These behaviors obey the space-charge-limited-current (SCLC) theory that explains the increase in the injected electrons from the electrode to the films with the increasing applied voltage. The increase in the number of injected electrons causes filling up the traps and coming up the space charges [45][46][47]. At strong forward bias region (region 3), because of the strong electron injection, the electrons escape from the traps and contribute to space-charge-limited-current [45][46][47][48][49].…”

Section: Resultsmentioning

confidence: 99%

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