Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Abstract

In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination

“…Therefore, it can be said that the manufacture of MPS-type SD can be successfully used in diode, photodiode, and solar cell applications instead of conventional MS SDs with native or deposited insulator interlayer grown by traditional methods. Similar results were also expressed in recent literature on the MS type SDs with organic/polymer and composites [47][48][49][50][51].…”

Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions

“…The I transient increases rapidly with each time the surface is illuminated. As the illumination intensity increases, I transient shows stronger time dependence that can be attributed to the distribution of N ss and their impact on photogeneration. − …”

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

“…This variation in the decay times can be attributed to the redistribution of the intrinsic electric field due to the trapped charges at the interface. , Furthermore, it is evident from Figure that the illumination intensity can influence the variation of shallow and/or deep trap levels. With higher levels of illumination, greater intensities of trap levels may quicken the processes of charge separation and recombination at the interface through a process known as the GR process. − Thus, the photosensitive properties of the structure can change depending on the density of interface states/trap levels and the trapping/detrapping lifetimes. , …”

“…With higher levels of illumination, greater intensities of trap levels may quicken the processes of charge separation and recombination at the interface through a process known as the GR process. 70 − 72 Thus, the photosensitive properties of the structure can change depending on the density of interface states/trap levels and the trapping/detrapping lifetimes. 73 , 74 …”