Thin ferroelectric Ba x Sr 1 -x TiO 3 (BST) layers have been grown for the first time on semi-insulating silicon carbide substrates by RF magnetron sputtering of a ceramic target without using buffer sublayers. Results of investigation of the structure of obtained BST films and the electrical properties of related planar capacitors are presented. The obtained structures are characterized by high nonlinearity and low dielectric losses at microwave frequencies.
X-ray diffraction and total external reflection of X-rays(X-ray reflectometry) methods were used to study the successivestages of synthesis of epitaxial SiC films on Si (100) X-raydiffraction and total external X-ray reflection (XRD) methods wereused to study successive stages of synthesis of epitaxial SiC films on Si(100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied,(110) and (111) Si, into SiC surfaces. A comparative analysis of theX-ray structural quality of the SiC layers grown on Si by the atomsubstitution method with the quality of SiC layers grown by Advanced Epi bythe standard CVD method. A modified technique for the total outerX-ray reflection method, based on measurements of the intensity ofthe reflected X-rays using a special parabolic mirror. It is shownthat the method of total external reflection method makes it possible toobtain important information about the degree of surface roughness of SiClayers, the evolution of their crystal structure and plasmon energy in theprocess of Si to SiC conversion. Keywords: total external reflection, X-ray reflectometry,silicon carbide, plasmons.\
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.