Total External Reflection of X Rays from Polycrystal Solid Surface

Стожаров, В. М.; Pronin, V. P.

doi:10.1134/s1063784217120246

Cited by 5 publications

(7 citation statements)

References 6 publications

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“…Thus, for TER of X-rays from polished tantalum, there is a direct dependence of the decrement of the refractive index of X-rays on the interplanar distance. Studies of a number of metals [25], including nickel, copper, silver, platinum, bismuth, have shown that for all these materials just as for tantalum, the decrements of the refractive index of X-rays are directly proportional to the interplanar distances.The linear function in this case is represented by a simple relation δ = Cd, where C is the proportionality coefficient. Table 2 shows the values of the decrements δ of the refractive index of the X-rays of all the metals studied, the interplane distances d, constants C, absolute errors ∆C and the depth of output of X-rays x, experienced by TER.…”

Section: Reflexmentioning

confidence: 99%

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Surface Plasmons Excited by X-rays in the Surface Layers of Solids

Стожаров¹

2022

Solids

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The phenomenon of total external reflection of X-rays at a sliding angle of incidence of a beam of incident X-rays is investigated. For metals, a quantitative law of direct dependence of the refractive index decrement on the interplane distance is obtained. The excitation of surface plasmons by X-rays that have experienced complete external reflection is detected. For surface plasmons, a dimensional effect was observed, expressed in an increase in the energy of plasmons and the concentration of conduction electrons with an increase in the depth of the output of surface plasmons. By the method of dispersion of surface plasmons, internal mechanical micro-stresses and spontaneous polarization of the surface layers of glassy dielectrics and in thin layers of vanadium dioxide were determined. The absence of micro-stresses in the lithium fluoride ionic single crystal was found out, and the polarization observed in it is due to the large dipole moment of the molecules of this crystal. In thin films of vanadium dioxide, the dependence of micro-stresses on the stresses in the substrates was found.

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Section: Reflexmentioning

confidence: 99%

“…The plasmon dispersion shown in Figure 14 for vanadium dioxide №2 is a loop-like closed curve with a relatively small area, within which the average plasmon energy equal to E P = 0.23 eV is calculated by Equation (25).…”

Section: Investigation Of the Dispersion Of Surface Plasmons By The M...mentioning

confidence: 99%

Surface Plasmons Excited by X-rays in the Surface Layers of Solids

Стожаров¹

2022

Solids

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“…Whereas the first maximum is located around 10 00 for each sample, the second maximum depends on the porosification parameters, both in terms of intensity and position. The decrease of the refraction intensity can be attributed to a decrease of the volume density of scattering atoms from where X-ray TER takes place (Stozharov, 2017;Stozharov & Pronin, 2017). The critical angle of the pSi c is positioned at 576, 556, 533 and 509 00 , respectively, for S1, S2, S3 and S4, and depends on the electron density near the surface (Tolan & Press, 1998).…”

Section: Research Papersmentioning

confidence: 99%

X-ray scattering profiles: revealing the porosity gradient in porous silicon

et al. 2021

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Porous silicon layers with different porosities were prepared by adjusting the anodization current density of the electrochemical etching process, starting from highly doped p-type crystalline silicon wafers. The microstructural parameters of the porous layers were assessed by high-resolution X-ray diffraction, total external reflection, scanning electron microscopy and nitrogen adsorption–desorption analysis. Furthermore, both the surface porosity and the mean porosity for the entire volume of the samples were estimated by employing total external reflection measurements and X-ray reciprocal-space mapping, respectively. The results clearly indicate that the surface porosity is different from the mean porosity, and the presence of a depth porosity gradient is suggested. To evaluate the porosity gradient in a nondestructive way, a new laboratory method using the grazing-incidence X-ray diffraction technique is reported. It is based on the analysis of the X-ray scattering profiles of the porous layers to obtain the static Debye–Waller factors. In this way, a description of the porosity gradient in a quantitative framework becomes possible, and, as a result, it was shown that the porosity increases exponentially with the X-ray penetration depth. Moreover, a strong dependence between the porosity gradient and the anodization current was demonstrated. Thus, in the case of the lowest anodization current (e.g. 50 mA cm−2) a variation of only 15% of the porosity from the surface to the interface is found, but when applying a high anodization current of 110 mA cm−2 the porosity close to the bulk interface is almost three times higher than at the surface.

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“…However, as will be shown below, it is possible to obtain important data on the structure of matter using only the slightly modified TER method. In works [9][10][11][12] the technique for X-ray TER analysis was developed, based on measuring the intensity of reflected X-rays during grazing incidence of a paraxial beam with the grazing angle of about 0.5 ′ . The paraxial beam was formed using special parabolic mirror.…”

Section: Introductionmentioning

confidence: 99%

“…The characteristic feature of X-ray TER is that it essentially depends on which crystallographic planes lying near the surface of crystallites are parallel to the surface of these crystallites [10].…”

Section: Introductionmentioning

confidence: 99%

Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

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Osipova

et al. 2022

Physics of the Solid State

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X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion. Keywords: total external reflection, X-ray reflectometry, silicon carbide, plasmons.

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Total External Reflection of X Rays from Polycrystal Solid Surface

Cited by 5 publications

References 6 publications

Surface Plasmons Excited by X-rays in the Surface Layers of Solids

Surface Plasmons Excited by X-rays in the Surface Layers of Solids

X-ray scattering profiles: revealing the porosity gradient in porous silicon

Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

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