Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

Abstract

X-ray diffraction and total external reflection of X-rays(X-ray reflectometry) methods were used to study the successivestages of synthesis of epitaxial SiC films on Si (100) X-raydiffraction and total external X-ray reflection (XRD) methods wereused to study successive stages of synthesis of epitaxial SiC films on Si(100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied,(110) and (111) Si, into SiC surfaces. A comparative analysis of theX-ray structural quality of the SiC layers grown on Si by the atomsubstitution method with the quality of SiC layers grown by Advanced Epi bythe standard CVD method. A modified technique for the total outerX-ray reflection method, based on measurements of the intensity ofthe reflected X-rays using a special parabolic mirror. It is shownthat the method of total external reflection method makes it possible toobtain important information about the degree of surface roughness of SiClayers, the evolution of their crystal structure and plasmon energy in theprocess of Si to SiC conversion. Keywords: total external reflection, X-ray reflectometry,silicon carbide, plasmons.\

Change of the elastic strain in SiC films growing on Si substrates by the method of consistent atomic substitution

“…The SiC films grown during 1 min and 40 min had the most perfect crystal structure. It should be noted that without the addition of SiH 4 to the reaction zone, the SiC film in the first 10 min of growth is stretched [1], and not compressed, as in this case. At the same time, the residual elastic deformation is less in SiC/n-Si structures.…”

“…In the work [1], the evolution of the crystal structure and surface morphology of SiC films synthesized on the Si surface by the method of coordinated substitution of atoms was investigated by the X-ray diffraction (XRD) and the method of total external reflection of X-rays (TERXR). A detailed description of the method of coordinated substitution of atoms can be found in the reviews of [2,3].…”

“…In the work [1], the problem of detecting the evolution of elastic deformations occurring in the SiC film during growth in the absence of SiH 4 was solved, i.e. the growth of films was carried out only in the CO atmosphere.…”

“…The purpose of this workto continue the research started in [1] and to follow the evolution of elastic deformations in the SiC film grown by the method of substitution of atoms in a mixture of gases CO and SiH 4 .…”