Sequential stages of synthesis of SiC epitaxial films on n- and p-type Si(111) substrates in a mixture of carbon monoxide and silane are studied by X-ray diffraction (XRD) and Raman scattering methods. It was found that the elastic strain in SiC films grown on n-type Si(111) is absent in contrast to SiC films grown on p-type Si(111), where the deformations are formed and completely relaxed by the 40 min of synthesis. A dramatic change in the SiC film structure is observed on the third minute of the growth, which is associated with the formation and growth of pores in the SiC layer. Differences in the lattice constants of SiC films grown on p- and n-type Si substrates are determined and verified via analysis of the change in the curvature of SiC/Si wafers. Keywords: Silicon carbide on silicon, elastic strain, nanostructures, microstructure evolution.
The layers of Al and Co are deposited successively on SiO2 substrates using magnetron sputtering technique. Thereafter, annealing is provided at 1100°C in 2-195 minutes in the muffle furnace. The color of the layers is changed gradually from brown at 2 minutes to blue at 195 minutes. The change of the structure during annealing is seen from the Raman spectra. The line at 188 cm-1 shifts to 203 cm-1, which shows the substitution of the Co3+ with less massive Al3+ ions during the formation of CoAl2O4. The most intensive peak at 505 cm-1 disappears after the process is finished in 60 minutes. the annealing is provided in the Ar+O2 atmosphere with 5% and 0.07% of oxygen in the temperature range from 850 to 1100 °C. The film with the layered structure is obtained at the low oxygen conditions.
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