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It has been reported that the gate leakage currents are described by the Frenkel-Poole emission (FPE) model, at temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I II ), is added. Based on the samples with different passivations, the I II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (ϕ B -V g ) 0.5 . Compared with these from the FPE model, the calculated results from the modified model agree well with the I g -V g measurements at temperatures ranging from 295 K to 475 K.

Comparison of electrical characteristic between AlN/GaN andAlGaN/GaN heterostructure Schottky diodes * Lü Yuan-Jie(吕元杰) a) , Feng Zhi-Hong(冯志红) a) † , Lin Zhao-Jun(林兆军) b) , Gu Guo-Dong(顾国栋) a) , Dun Shao-Bo(敦少博) a) , Yin Jia-Yun(尹甲运) a) , Han Ting-Ting(韩婷婷) a) , and Cai Shu-Jun(蔡树军) a)