Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Abstract

Comparison of electrical characteristic between AlN/GaN andAlGaN/GaN heterostructure Schottky diodes * Lü Yuan-Jie(吕元杰) a) , Feng Zhi-Hong(冯志红) a) † , Lin Zhao-Jun(林兆军) b) , Gu Guo-Dong(顾国栋) a) , Dun Shao-Bo(敦少博) a) , Yin Jia-Yun(尹甲运) a) , Han Ting-Ting(韩婷婷) a) , and Cai Shu-Jun(蔡树军) a)

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

“…( 12), the calculated density of dislocation is about 1.49 × 10 7 cm −2 , which is in consistence with the reported data in the literatures. [12,13] This result may support the assumption that the tunneling mechanism governed by dislocations is the predominant current mechanism in Ni/Au AlGaN/GaN Schottky contacts as many researchers ascribed. However, the thin surface barrier (TSB) model was previously proposed by Hasegawa [8] in which the presence of the unintentional surface donors may reduce the width of the Schottky barrier so that carriers are able to tunnel the potential barrier easily.…”

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

“…AlGaN/GaN heterostructure field effect transistors (HFETs) have been demonstrated to be extremely promising for various applications, such as high power, high frequency, high temperature, and switching power devices. [1][2][3][4][5][6][7] For the switching applications, a low OFF-state power loss, a high ON/OFF current ratio, and a low subthreshold swing are considerably critical. [8][9][10][11] To improve the switching characteristics of AlGaN/GaN HFETs, many different approaches were proposed, for example, O 2 plasma treatment, oxidefilled isolation structure followed by N 2 /H 2 postgate annealing, dry etching cap layer, and using high-k gate insulator materials.…”