Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang, Yuangang; Feng, Zhi-Hong; Lv, Yuanjie; Tan, Xin; Dun, Shaobo; Fang, Yulong; Cai, Shujun

doi:10.1088/1674-1056/25/10/107106

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…This G m characteristic can be seen commonly in the HEMTs with an AlGaN buffer. [19][20][21] However, due to the improved gateto-channel control efficiency, the BGaN device has a steep change of G m near the pinch-off region, which implies the low sub-threshold current and good pinch-off quality. To evaluate the SCEs in the devices, the drain-induced barrier lowering (DIBL) and sub-threshold swing (SS) value are calculated as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The negative piezoelectric polarization charges can be generated at the GaN channel/BGaN buffer interface to enhance the 2DEG confinement. This manner to enhance 2DEG confinement is somewhat similar to the AlGaN buffer structure [11,[19][20][21] in which a sheet-like negative polarization charge is produced at the GaN channel/AlGaN buffer interface due to the spontaneous and piezoelectric polarization discontinuities. Using the semi-insulating property and small lattice constant a of BGaN alloy, the use of BGaN buffer promises to be a new method to suppress the SCEs.…”

Section: Introductionmentioning

confidence: 99%

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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Han¹,

Zhao²,

Peng³

2019

Chinese Phys. B

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Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas (2DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor (HEMT). Based on the two-dimensional TCAD simulation, the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B 0.01 Ga 0.99 N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (L G /d) down to 6, which is much lower than that the GaN buffer device with L G /d=11 can reach. Furthermore, due to a similar manner of enhancing 2DEG confinement, the B 0.01 Ga 0.99 N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects (SCEs) is comparable to that of an Al 0.03 Ga 0.97 N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Han¹,

Zhao²,

Peng³

2019

Chinese Phys. B

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“…Owing to the enormous potential in high power and high frequency applications, the GaN based high electron mobility transistors (HEMTs) have attracted tremendous attention in the past two decades. [1][2][3] One of the core issues in recent research is the realization and optimization of the enhancementmode (E-mode) devices with positive threshold voltage (V TH ), which is crucial for the safe operation in the power electronic applications and various monolithic integrated digital circuits. [4] Various methods have been tested to achieve the E-mode HEMTs, which include the gate recess, [5,6] fluorine plasma ion implantation, [7][8][9] and P-type GaN gate.…”

Section: Introducementioning

confidence: 99%

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

et al. 2019

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Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×10 12 cm −2 , together with a high electron mobility of 1229.5 cm 2 /V•s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 µm×2 µm scan area. In addition to the improved properties, the enhancement-mode metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) processed on the heterostructures not only exhibited a high threshold voltage (V TH ) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 mA/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.

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“…AlGaN ternary compound has attracted much interest due to its wide application in light-emitting devices, [1,2] solarblind ultraviolet (UV) detectors, [3,4] and high-power and hightemperature electronic devices. [5,6] With the band gap varying from 3.4 eV to 6.2 eV, it is an ideal semiconductor for UV applications, especially light-emitting devices. Although Al-GaN light-emitting devices have been made successfully, the AlGaN epilayer suffers from a high density of threading dislocations due to the lattice mismatch and thermal mismatch, which act as nonradiative recombination centers.…”

Section: Introductionmentioning

confidence: 99%

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

Jin

Wang

et al. 2017

Chinese Phys. B

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AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.

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Modified model of gate leakage currents in AlGaN/GaN HEMTs

Cited by 3 publications

References 13 publications

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

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