Articles you may be interested inEffects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure fieldeffect transistors with Ti/Al/Ni/Au gate electrodes Appl. Phys. Lett. 105, 083501 (2014); 10.1063/1.4894093 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors J. Appl. Phys. 116, 044507 (2014); 10.1063/1.4891258 Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors Appl.

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In this Letter, we present direct current (DC), small signal radio frequency (RF), and large signals with pulsed and continuous wave (CW) studies and characterization on oxygen annealed (OA) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with significantly improved CW output power density (Pout) when compared to other β-Ga2O3 RF devices. The OA process is found to be useful in compensating and neutralizing the donors in the unintentionally doped (UID) buffer layer and, hence, suppressing a second depletion effect in this UID layer. The device demonstrates a peak DC drain current of 200 mA/mm, a transconductance of 11 mS/mm, and an on/off ratio of 109. Small-signal RF characterization indicates a cut-off frequency and maximum oscillation frequency (fT/fmax) of 1.8 GHz and 4.2 GHz, respectively. The device also shows an output power (Pout)/peak power added efficiency (PAE)/gain of 0.4 W/mm/10%/3.2 dB and 0.43 W/mm/12%/3.6 dB for CW and pulsed signals, respectively, at an operation frequency of 1 GHz.

The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.

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