High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit

Tan, Xin; Lv, Yuanjie; Zhou, Xingye; Song, Xubo; Wang, Yuangang; Gu, Guodong; Guo, Huajun; Liang, Shixiong; Feng, Zhihong; Cai, Shujun

doi:10.1016/j.mee.2019.111143

Cited by 18 publications

(15 citation statements)

References 20 publications

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“…The study showed that the opposed stress response of the two pairs of the bridge resistances resulting in a high sensitivity of 72 μV/kPa/V for the fabricated sensor [76]. The study results showed that the device also had a large output capability of 64.8 mV/V [76]. The results of that study also showed a great potential of AlGaN/GaN devices for pressure sensing applications [76].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 82%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…The AlGaN/GaN pressure sensor with a specially designed Wheatstone bridge structure was investigated and reported by Tan et al [76]. In that study, four gateless AlGaN/GaN HEMTs were placed in pairs at the tensile stress area (near to the edge) and compressive stress area (in the Centre) of the circular diaphragm [76,77]. The study showed that the opposed stress response of the two pairs of the bridge resistances resulting in a high sensitivity of 72 μV/kPa/V for the fabricated sensor [76].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…In that study, four gateless AlGaN/GaN HEMTs were placed in pairs at the tensile stress area (near to the edge) and compressive stress area (in the Centre) of the circular diaphragm [76,77]. The study showed that the opposed stress response of the two pairs of the bridge resistances resulting in a high sensitivity of 72 μV/kPa/V for the fabricated sensor [76]. The study results showed that the device also had a large output capability of 64.8 mV/V [76].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

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Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 82%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

See 2 more Smart Citations

Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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“…Inverse modeling technique is used to calibrate the output of the piezoelectric pressure sensor by Zhao and Kong (2020). Calibration of AlGaN/GaN pressure sensor using a Wheatstone bridge is reported by Tan et al (2020). Han et al (2020) report a low-pressure sensor using carbon nanotube electrodes with dielectric elastomers; the sensitivity of the sensor increases with the porosity of dielectric.…”

Section: Introductionmentioning

confidence: 99%

Capacitance pressure sensor with S-type electrode for improved sensitivity

Venkata

Rao

2021

Transactions of the Institute of Measurement and Control

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This paper aims at designing a differential pressure sensor. The objective of the work is to design and fabricate the electrodes of a capacitive pressure sensor, so as to measure absolute and differential pressure accurately with improved sensitivity. In place of conventional parallel plate diaphragm, S-type electrodes are proposed in the present work. The work comprises of study of the proposed design in terms of a mathematical model, input-output behavior along with detailed analysis of pressure distribution pattern. Output capacitance obtained for changes in pressure is converted to voltage with the suitable signal conditioning circuit and data acquisition system to acquire the signal on to a PC. A neural network model is designed to compensate the nonlinearities present in the sensor output. Input-output characteristics of the designed sensor shows an improved response as compared with existing pressure sensors.

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Engineering Route for Stretchable, 3D Microarchitectures of Wide Bandgap Semiconductors for Biomedical Applications

Truong

Nguyen

Huang

et al. 2023

Adv Funct Materials

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Wide bandgap (WBG) semiconductors have attracted significant research interest for the development of a broad range of flexible electronic applications, including wearable sensors, soft logical circuits, and long‐term implanted neuromodulators. Conventionally, these materials are grown on standard silicon substrates, and then transferred onto soft polymers using mechanical stamping processes. This technique can retain the excellent electrical properties of wide bandgap materials after transfer and enables flexibility; however, most devices are constrained by 2D configurations that exhibit limited mechanical stretchability and morphologies compared with 3D biological systems. Herein, a stamping‐free micromachining process is presented to realize, for the first time, 3D flexible and stretchable wide bandgap electronics. The approach applies photolithography on both sides of free‐standing nanomembranes, which enables the formation of flexible architectures directly on standard silicon wafers to tailor the optical transparency and mechanical properties of the material. Subsequent detachment of the flexible devices from the support substrate and controlled mechanical buckling transforms the 2D precursors of wide band gap semiconductors into complex 3D mesoscale structures. The ability to fabricate wide band gap materials with 3D architectures that offer device‐level stretchability combined with their multi‐modal sensing capability will greatly facilitate the establishment of advanced 3D bio‐electronics interfaces.

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High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit

Cited by 18 publications

References 20 publications

Review of GaN Nanowires Based Sensors

Review of GaN Nanowires Based Sensors

Capacitance pressure sensor with S-type electrode for improved sensitivity

Engineering Route for Stretchable, 3D Microarchitectures of Wide Bandgap Semiconductors for Biomedical Applications

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