This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.
This paper presents the recent advances of the Zinc Oxide (ZnO) based nanowires and nanorods devices. ZnO has gained a substantial interest in the research area of the wide bandgap semiconductors due to its unique electrical, optical and structural properties. ZnO is considered as one of the major candidates for electronic and photonic applications. Also, it has distinguished and interesting electrical and optical properties. ZnO is considered as a potential contender in optoelectronic applications such as solar cells (SCs), surface acoustic wave devices, and ultraviolet (UV) emitters. The ZnO as a nanostructured material exhibits many advantages for nanodevices. ZnO nanostructured material has the ability to absorb UV radiation and immense in many optical applications. Recently, ZnO nanostructured based devices have gained much attention due to their various potential applications. ZnO as nanomaterial has been used in many devices such as UV photodetectors (PDs), light emitting diodes (LEDs), and transistors. The recent aspects of ZnO nanowires and nanorods based devices are presented and discussed.
Frequency modulated continuous wave (FMCW) radar is a solution for range and velocity measurement of a target. This paper introduces a simulation methodology for a RF front-end transceiver of a FMCW radar system including the target model. The proposed system model can incorporate realistic design conditions such as voltage controlled oscillator phase noise. The methodology has been applied to a 2.45 GHz FMCW radar with a single antenna for transmitting and receiving waves using Advanced Design System (ADS) simulation package from Agilent. Various values of target range and velocity are employed in the simulated model to verify the operation of the FMCW radar system. The proposed simulation model has been proven to be a useful tool in the design of FMCW radar systems. The system model is used to conclude some general guidelines to help the system designer.
This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.
Three novel differential precision rectifier circuits are realized using single CMOS differential voltage current conveyor. One of the realized differential precision rectifiers provides half wave voltage output. The other two circuits give full wave voltage outputs. Among the two full wave differential precision rectifiers, one circuit provides single ended voltage output while other full wave differential precision rectifier gives differential full wave voltage output. All the realized differential precision rectifiers possess the gain control facility through two resistors ratio. The realized differential precision rectifier circuits are designed and verified using PSPICE and the results thus obtained justify the theory.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.