Review of GaN Nanowires Based Sensors

Nahhas, Ahmed M.

doi:10.12691/ajn-8-1-4

Cited by 4 publications

(2 citation statements)

References 88 publications

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“…There is a growing interest in using GaN for novel nanoelectronic device structures. For example, GaN-based nanostructures have broad potential applications in piezoelectronics [4,5], biocompatible devices [6,7], solar energy harvesting [8], sensors [9], and field emission [10][11][12]. Many of these applications rely on fabricating GaN into nanowires as this provides an option for vertical device morphologies.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Kazanowska¹,

Sapkota²,

Lu³

et al. 2021

Nanotechnology

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The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H3PO4 crystallographic wet etch is explored. The vertical nanowires are oriented in the direction and are bound by sidewalls comprising of semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. The measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm−1 for a 50 nm gap, and uniform emission across the array.

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Section: Introductionmentioning

confidence: 99%

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Kazanowska¹,

Sapkota²,

Lu³

et al. 2021

Nanotechnology

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show abstract

“…GaN nanowires exhibit many advantages for such devices as gas sensors, biosensors, and pressure sensors because of its higher surface-to-volume ratio as compared to thin films [31,32].…”

Section: Discussionmentioning

confidence: 99%

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Kovalenko,

Kozlovskiy,

Sharan

et al. 2024

J. Phys.: Condens. Matter

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Analytical expressions for the low-field mobility of charge carrier gases with three-(3D), two-(2D) and one-(1D) dimensionalities are obtained. Multi-ion ionized impurities scattering, acoustic and polar optic phonons are considered as scattering mechanisms. The calculated values of mobility are compared to known experimental data for bulk (3D) n-and p-type wurtzite, n-type zinc-blende GaN crystals and low dimensional (2D and 1D) ternary GaAlN compounds. The resulting analytical expressions give the dependences of mobility on dimensionality of charge carrier gas, its density, effective mass, temperature and confining dimensions. A comparison of the experimental and calculated temperature dependences of the mobility in bulk GaN crystals (3D) and in AlGaN/GaN nanowires (1D) shows that the mobility at T > 100 K is determined by the scattering of charge carriers by polar optical phonons with an energy of 91.2 meV. The temperature dependences of mobility in Al0.25Ga0.75N/GaN heterostructures (2D) at T > 100 K are in consistent with experiment for electron scattering by polar optical phonons with a noticeably higher energy of 160 meV. We associate this fact with the heterointerface, which according to well-known theoretical studies can change both the strength of electron polar optical phonons scattering and the energy of the phonons.

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Controlled synthesis of GaN square shape nanorods: Their excellent electronic and optical properties for optoelectronics applications

Maraj

Nabi

Tanveer

et al. 2023

Journal of Luminescence

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Review of GaN Nanowires Based Sensors

Cited by 4 publications

References 88 publications

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Controlled synthesis of GaN square shape nanorods: Their excellent electronic and optical properties for optoelectronics applications

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