High performance 1500 V 4H-SiC junction barrier Schottky diodes

Zhao, J.H.; Alexandrov, Petre; Fursin, L.; Feng, Zhi-Hong; Weiner, M.

doi:10.1049/el:20020947

Cited by 12 publications

(6 citation statements)

References 3 publications

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“…These results are helpful for optimizing the design of the high voltage MPS diodes. Figure 5 shows a comparison between calculated reverse leakage currents with experimental results [4] of the 4H-SiC MPS. At a low voltage bias, the leakage current is dominated by thermionic emission.…”

Section: Electric Field At the Schottky Contactmentioning

confidence: 99%

Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes

Song¹,

Zhang²,

Zhang³

et al. 2009

Chinese Phys. B

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A new analytical model for reverse characteristics of 4H-SiC merged PN-Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H-SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel-Kramers-Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (X j) on the characteristics of 4H-SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.

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Section: Electric Field At the Schottky Contactmentioning

confidence: 99%

Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes

Song¹,

Zhang²,

Zhang³

et al. 2009

Chinese Phys. B

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“…In order to reduce the reverse leakage current of SiC SBDs, various methods have been proposed through the years [116,[124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139][140][141]. These include the Junction Barrier Schottky In Table 6, various structures reported to reduce the reverse leakage current and increase on-off current ratio of the SBD are listed through recently years.…”

Section: Hybrid Structures For Leakage Current Reductionmentioning

confidence: 99%

Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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“…However, its reverse leakage current degenerates rapidly when Schottky surface electric field is high enough that a tunneling effect occurs [5]. In order to avoid tunneling current and maintain low conduction voltage, junction barrier Schottky (JBS) diode is proposed [6], [7]. As the junction depth of P+ region is limited by ion implantation energy, there is a tradeoff between on-resistance (R on ) and breakdown voltage (BV) in JBS devices.…”

Section: Introductionmentioning

confidence: 99%

An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

Cao

Bao

Wu³

et al. 2019

IEEE Access

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An improved 4H-SiC trench MOS barrier Schottky (TMBS) structure that can significantly reduce the specific on-resistance (R on,sp) is proposed in this paper. Compared with the conventional TMBS structure, an N-type region is added around the P+ shielding region and along the trench sidewall in the proposed structure, and the doping concentration is higher than that of the drift region. The JFET resistance, and spread resistance can both be reduced significantly during the forward bias to produce a much lower R on,sp , which have been verified through the numeric simulations and modeling analysis. The critical parameters (N-type region width and its doping concentration) of the proposed structure are mainly optimized by the ATLAS simulation tool. As a result, the breakdown voltage and leakage current of the improved structure remain basically unchanged compared with the conventional TMBS. However, the R on,sp and FoM (BV 2 /R on,sp) can be effectively improved by 41.9% and 70.9%, respectively. INDEX TERMS 4H-SiC, TMBS, JFET, analytical model, specific ON-resistance, electric field.

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High performance 1500 V 4H-SiC junction barrier Schottky diodes

Cited by 12 publications

References 3 publications

Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes

Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes

Silicon Carbide Schottky Barrier Diode

An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

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