A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV 2 /Ron,sp) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (Crss) and gate-drain charge (Qgd) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×R on,sp) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%.
In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by the Sentaurus TCAD tool; the results show that with a gate-drain spacing of 6 µm, the optimized DP-MISFET can achieve high Baliga's figure of merit of 3.23 GW • cm −2 due to the modulation of the electric field distribution. Compared with the conventional MISFET (C-MISFET) with the breakdown voltage (BV) of 503.9 V and specific on-resistance (R on,sp ) of 0.63 m • cm 2 , the proposed structure can achieve a better trade-off between the breakdown voltage and specific on-resistance achieving R on,sp and BV of 0.63 m • cm 2 and 1427 V, respectively.
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