Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers

Abstract

In this paper, a performance-improved AlGaN-/GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed. The proposed structure is simulated, and its characteristics are analyzed by the Sentaurus TCAD tool; the results show that with a gate-drain spacing of 6 µm, the optimized DP-MISFET can achieve high Baliga's figure of merit of 3.23 GW • cm −2 due to the modulation of the electric field distribution. Compared with the conventional MISFET (C-MISFET) with the breakdown voltage (BV) of 503.9 V and specific on-resistance (R on,sp ) of 0.63 m • cm 2 , the proposed structure can achieve a better trade-off between the breakdown voltage and specific on-resistance achieving R on,sp and BV of 0.63 m • cm 2 and 1427 V, respectively.

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

“…Furthermore, when using Mg as a P-type dopant, the activation rate is very low due to Mg being a deep-level impurity. Therefore, the hole concentration in the P-type GaN buried layer is unlikely to exceed 1 × 10 18 cm −3 [19] Considering that the simulation should be consistent with reality, N P is the doping concentration of PBL, and the value is set between 1 × 10 17 cm −3 and 5 × 10 17 cm −3 [20]. Distance between PBL and barrier layer (D P ) 0.1 to 0.5 µm…”

“…Micromachines 2023, 14, x FOR PEER REVIEW 3 of 12 buried layer is unlikely to exceed 1 × 10 18 cm −3 [19] Considering that the simulation should be consistent with reality, NP is the doping concentration of PBL, and the value is set between 1 × 10 17 cm −3 and 5 × 10 17 cm −3 [20]. The corresponding descriptions of the device manufacturing process steps are summarized as follows:…”

“… The AlGaN barrier layer is grown on GaN buffer layer via MOCVD. Using plasma enhanced chemical vapor deposition (PECVD), a Si 3 N 4 layer is deposited on the AlGaN barrier layer as the passivation layer [ 20 ]. The source and drain contact are etched, and then electron beam evaporation is used to deposit Ti/Al/Ni/Au to form the source and drain electrodes, followed by high-temperature annealing.…”

Spectrum of Advancements and Developments in Multidisciplinary Domains for Generative Adversarial Networks (GANs)

“…If information about surface pressure, velocity and sea surface temperature are added the results can become more accurate Advantage: predict the typhoon center as well as the movement of clouds with certain margins for error Sports Jiao et al [44] 2018 Distinguishes correct performed golf swings Achieved accuracy and precision both in identification as well as classification of golf swings Deverall et al [45] 2017 Conditional GAN for designing athletic shoes based on google gnet Achieved shoes categorization according to their physical attributes as well as functional type Internet of things (IoT) Wang et al [46] 2018 Use of Bayesian methods for Radio Frequency (RF) sensing for IoT Advantage: overcome limitation of limited data availability by introducing an offline stage Zhao et al [47] 2018 Individual identity authentication by applying open-categorical classification model based on gan (occ-gan) Advantage: better results are achieved than other methods like one-class support vector machine (oc-svm) and one-versus-rest support vector machine (ovr-svm) Genetic engineering Dizaji et al [48] 2018 Gene expression profiling by using semi-supervised GAN for expression inference Use landmark genes instead of whole gene expressions Simulation and modeling Hassouni et al [49] 2018 Generating realistic simulation environments that simulates daily activities of users Advantage: generate realistic sensory data that related to daily activities of users Pöpperl et al [50] 2019 Synthetic ultrasonic signal simulation using conditional gans (cgans) Advantage: real like data augmentation for automotive ultrasonic and also adaptive to external influences Market prediction and forecasting Tian et al [51] 2019 A technique for predicting the consumption of energy Advantage: outperforms the standard approaches i.e. information diffusion technology (idt), the heuristic mega-trend-diffusion (hmtd) technology and the bootstrap technique Advantage: scalable to perform forecast for demand of electricity and the traffic supply Luo et al [52] 2018 A technique for predicting the prices of the crude oil using adap- [55] 2019 Double P-buried layers MISFET (DP-MISFET) is proposed Simulated and characteristics are analysed by the Sentaurus TCAD tool Road network generation and path planning Albert et al [56] 2018 Novel technique to simulate real like urban designs fine-tuned with urban land-use inventory Advantage: synthetic urban pattern is formulated to qualitatively regenerate the spatial structures perceived in urban designs Mohammadi et al [57] 2018 Precise and reliable paths for navigation software including wayfinding for disabled people, route identification for evacuations, robotic navigations for autonomous vehicles Advantage: high accuracy of the classification task with high quality of the generated paths is achieved Testing and validation Zhang et al [58] 2018 Unsupervised model for automatic verification and validation of the consistent behavior of autonomous vehicle driving systems Real time validation is also achieved Segura et al [59]<...>…”

“…The authors in [54] proposes generation and recognition of floor plan using GAN such that images of the floor plan processed by GAN based model can be translated into programmatic patches of colors. Wang et al [55], a performance-improved AlGaN-/ GaN-Based metal-insulator-semiconductor field effect transistor (MISFET) with double P-buried layers MISFET (DP-MISFET) is proposed, simulated and attribute analysis is conducted by the Sentaurus TCAD tool.…”