Silicon Carbide Schottky Barrier Diode

Abstract

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

“…The high Si-C bonding energy value makes SiC chemically resistive and stable at high temperatures [6]. Because of relatively high band gap value (2.3, 2.9 and 3.3 eV for 3C-SiC, 6H-SiC and 4H-SiC, respectively) [7], very good thermal conductivity and large avalanche breakdown voltage, SiC has been used for the fabrication of high temperature electronics, high power microwave applications and high-radiation environments [6].…”

Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

“…The load inductor L Load was manufactured with an inductance of 505µH with an air core to avoid saturation. An ultra fast SiC schottky diode [26] was chosen as a free wheeling diode D F W . The bus capacitance C BU S is composed of a multilayer ceramic and metalized polypropylene film capacitors stack which totalize a capacitance of 5µF with a maximum rated voltage of 1200V .…”

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

“…This gives U 1 = 0.8 eV for our CDSD, and this barrier height is adjustable by changing the materials used. For example by using Ag with SiC poly-types for which the electron affinity can be varied between 2.33–4.00 eV 48 49 , barrier height can be adjusted between 0.70–1.57 eV. For all calculations, we assume the potential-barrier U 2 between the nanorods and the external circuit is 0.5 eV.…”